• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3217-3220
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• 2010

The electronic structures and bonding configuration of histidine on Ge(100) have been investigated with various sample treatments using core-level photoemission spectroscopy (CLPES). Interpretation of the Ge 3d, C 1s, N 1s, and O 1s core level spectra being included in these systems revealed that both the imino nitrogen in the imidazole ring and the carboxyl group in the glycine moiety concurrently participate in the adsorption of histidine on a Ge(100) surface at 380 K. Moreover, we could clearly confirm that the imino nitrogen with a free lone pair in the imidazole group adsorbs on Ge(100) more strongly than the carboxyl group in the glycine moiety by examining systems annealed at various temperatures.

• Journal of Adhesion and Interface
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• v.7 no.3
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• pp.26-33
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• 2006

Nylon fabrics were corona treated with different current intensity (5, 10, 15, 20 A) and feeding speed (5, 10, 15 m/min). We confirmed the change of nylon fabrics surface using X-ray diffraction apparatus, scanning electron microscopy (SEM) and X-ray photoelectron spectrometer (ESCALAB). And the change of physical properties through measuring the tensile strength, tear strength, bonding and wet bonding strength. Thermosetting reactive polyurethane hot melt adhesive was used in the adhesion of nylon fabrics. Functional groups were introduced on nylon fabric surface by treating the fabrics in air atmosphere with corona discharge, and the result adhesion was improved. Bonding strength of the nylon fabric treated with corona was increased with increasing current intensity and decreasing feeding speed.

• Transactions of Materials Processing
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• v.27 no.5
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• pp.267-275
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• 2018

The clad sheet material is produced by a roll-bonding process of one or more materials with different properties. Good formability of clad sheet material is an essential property in to deform a clad metal sheet into a part or component. Performance of the clad sheet material largely depends on interfacial bond strength between different materials. In this study, interfacial bond strength of STS/Al clad sheet was analyzed by varying experimental parameters using a blanking process. Experimental parameters are the punching speed, clearance, and stacking order of plate materials. In addition, blanking test results were compared with bond strengths measured by the T-peel test, that analyzes interface bonding strength of the standard clad sheet. The blanking process was analyzed by the finite element method under the sticking condition of interface of different materials, and experimental results and analysis results were compared.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.4-10
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• 2013

In electronic industry, the trend of future electronics will be flexible, bendable, wearable electronics. Until now, there is few study on bonding technology and reliability of bonding joint between chip with micro solder bump and flexible substrate. In this study, we investigated joint properties of Si chip with eutectic Sn-58Bi solder bump on Cu pillar bump bonded on flexible substrate finished with ENIG by flip chip process. After flip chip bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test, thermal shock test, and bending test. After thermal shock test, we observed that crack initiated between $Cu_6Sn_5IMC$ and Sn-Bi solder and then propagated within Sn-Bi solder and/or interface between IMC and solder. On the other hands, We observed that fracture propated at interface between Ni3Sn4 IMC and solder and/or in solder matrix after bending test.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.206-210
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• 2005

The SOI structure with buried alumina was fabricated by ALD followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and cross section was investigated by SEM analysis. The density of interface state of alumina and silicon was 2.5E11/$cm^{2}$-eV after high temperature annealing for wafer bonding. It was confirmed that the surface silicon layer was completely isolated from substrate by cross section SEM and AES depth profile. The device on this alumina SOI structure would have better thermal properties than that on conventional SOI due to higher thermal conductivity of alumina than that of silicon dioxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.7-13
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• 2013

3D stacked IC is one of the promising candidates which can keep Moore's law valid for next decades. IC can be stacked through various bonding technologies and they were reviewed in this report, for example, wafer direct bonding and atomic diffusion bonding, etc. As an effort to reduce the high temperature and pressure which were required for high bonding strength in conventional Cu-Cu thermo-compression bonding, surface activated bonding, solid liquid inter-diffusion and direct bonding interface technologies are actively being developed.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.121-126
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• 2000

Metal/Ceramic structures have many attractive properties, with great potential for applications that demand high stiffness, as well as chemical and biological stability, thermal and electrical insulation. They are currently in use for mechanical and thermal protection in cutting tool and engine parts. With all their great advantage, ceramics suffer from one major problem they are brittle, and are especially susceptible to cracking from surface contacts. Delamination at the interfaces with adjacent layers is a particularly disturbing problem, and can cause premature failure of a composite system. so determination of adhesive properties of coating is one of the most important problems for the extension of the use of coated materials. In this work, mechanical characteristics of Interface of ceramic/Metal composites are evaluated by means of hardness test, indentation test apparent interfacial toughness and bonding strength test. The interface indentation test provides a relation between the applied load(P) and the length of the crack(a) created at the interface between the coating and the substrate.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)