Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication of Al2O3 SOI with direct bonding

직접 접합에 의한 Al2O3 SOI 구조 제작

  • Kong, Dae-Young (Department of Electronics Graduate School, KyoungPook National University) ;
  • Eun, Duk-Soo (Department of Electronics Graduate School, KyoungPook National University) ;
  • Bae, Young-Ho (Division of Information and Communication Engineering, Uiduk University) ;
  • Lee, Jong-Hyun (Department of Electronics Graduate School, KyoungPook National University)
  • 공대영 (경북대학교 전자전기컴퓨터공학부) ;
  • 은덕수 (경북대학교 전자전기컴퓨터공학부) ;
  • 배영호 (위덕대학교 정보통신공학부) ;
  • 이종현 (경북대학교 전자전기컴퓨터공학부)
  • Published : 2005.05.31
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Abstract

The SOI structure with buried alumina was fabricated by ALD followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and cross section was investigated by SEM analysis. The density of interface state of alumina and silicon was 2.5E11/$cm^{2}$-eV after high temperature annealing for wafer bonding. It was confirmed that the surface silicon layer was completely isolated from substrate by cross section SEM and AES depth profile. The device on this alumina SOI structure would have better thermal properties than that on conventional SOI due to higher thermal conductivity of alumina than that of silicon dioxide.

Keywords

References

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