Browse > Article
http://dx.doi.org/10.5369/JSST.2005.14.3.206

Fabrication of Al2O3 SOI with direct bonding  

Kong, Dae-Young (Department of Electronics Graduate School, KyoungPook National University)
Eun, Duk-Soo (Department of Electronics Graduate School, KyoungPook National University)
Bae, Young-Ho (Division of Information and Communication Engineering, Uiduk University)
Lee, Jong-Hyun (Department of Electronics Graduate School, KyoungPook National University)
Publication Information
Journal of Sensor Science and Technology / v.14, no.3, 2005 , pp. 206-210 More about this Journal
Abstract
The SOI structure with buried alumina was fabricated by ALD followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and cross section was investigated by SEM analysis. The density of interface state of alumina and silicon was 2.5E11/$cm^{2}$-eV after high temperature annealing for wafer bonding. It was confirmed that the surface silicon layer was completely isolated from substrate by cross section SEM and AES depth profile. The device on this alumina SOI structure would have better thermal properties than that on conventional SOI due to higher thermal conductivity of alumina than that of silicon dioxide.
Keywords
$Al_{2}O_{3}$; SOI; direct bonding;
Citations & Related Records
연도 인용수 순위
  • Reference
1 G. S. Higashi and C. G. Fleming, 'Sequential surface chemical reaction limited growth of high quality $Al_2O_3$ dielectrics', Appl. Phys. Letter, vol. 55, pp. 1963-1965, 1989   DOI
2 A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, '$Al_2O_3$ thin film growth on Si(100) using binary reaction sequence chemistry', Thin Solid Films, vol. 292, pp. 135-144, 1997   DOI   ScienceOn
3 이석헌, 이용수, 태흥식, 이용현, 이정희, 'GaAs 기판위에 성장된 단결정 AlAs층의 선택적 산화 및 XPS(X-ray photoneletron spectroscipy)분석', 센서학회지, 제5권, 제5호, pp. 79-84, 1996
4 M. Ishida, K. Sawada, S. Yamaguchi, and T. Nakamura, 'Heteroepitaxial Silicon/Alumina/Silicon structures', Appl. Phys. Letter, vol. 55, pp. 556-558, 1989   DOI
5 S. M. Bedair, M. A. Tischler, T. Katsuyama, and N. A. El-Masry, 'Atomic layer epitaxy of III-V binary compounds', Appl. Phys. Letter, vol. 47, pp. 51-53, 1985   DOI   ScienceOn
6 Gyula Eres, 'Kineti modeling of the atomic layer epitaxy processing window in group IV semiconductor growth', Appl. Phys. Letter, vol. 67, pp. 1727-1729, 1995   DOI   ScienceOn
7 전본근, 이태헌, 이정희, 이용현, 'GaAs 기판위에 성장된 단결정 AlAs층의 선택적 산화 및 XPS(X-ray photoneletron spectroscipy)분석', 센서학회지, 제8권, 제5호, pp. 421-426, 1999
8 Q. Y. Tong, U. Gosele, C. Yaun, A. Steckl, and M. Reiche, 'A model of low-temperature wafer bonding and its applications', J. Electrochem. Soc., vol. 143, pp. 1773-1779, 1996   DOI   ScienceOn
9 S. Cristoloveanu, 'Silicon on insulator technologies and devices: from present to future', Solid-State Electronics, vol. 45, pp. 1403-1411, 2001   DOI   ScienceOn