• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

• 대한전기학회논문지:시스템및제어부문D
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• 제52권5호
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• pp.213-213
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• 2003

We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권5호
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• pp.213-218
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• 2003

We investigated the monolayer behavior at the air-water interface with metal solution, the surface morphologies and the electrical properties such as conductivity, The calculated conductivity values of pure water subphase and its complexes with L $i^{+}$ ions are 5.6$\times$10$^{-l6}$ and 1.9$\times$10$^{-14}$ [S/cm], respectively. And the calculated barrier height D values of pure water subphase and its complexes with Li. ions are 0.70 and 0.66 [eV], respectively. We also attempted to fabricate a crown dendrimer Langmuir-Blodgett (LB) films containing functional end group that could form a complex structure with metal ions. Also, we investigated the surface activity of dendrimer films at air-water interface. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In conclusion, it is demonstrated that the metal ion around dendrimer and polymer included crown function group can contribute to make formation of network structure among crown function group and result in change of electrical properties.s.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.43-46
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• 1998

We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.29-33
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• 2014

In this paper, we report our numerical simulation on the electronic-optical properties of the phosphorescent organic light emitting diodes (PHOLEDs) devices. In order to calculate the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM). Our model includes Poisson's equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation. We demonstrate that the refractive indexes of each material affect the emission property and the barrier height of the interface influences the behavior of charges and the generation of exciton.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.955-959
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• 2004

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.