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Investigation of Oxygen Incorporation in AlGaN/GaN Heterostructures  

Jang, Ho-Won (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH))
Baik, Jeong-Min (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH))
Lee, Jong-Lam (Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH))
Shin, Hyun-Joon (Beamline Department, Pohang University of Science and Technology(POSTECH))
Lee, Jung-Hee (School of Electronic Engineering and Computer Science, Kyungpook National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.3, no.2, 2003 , pp. 96-101 More about this Journal
Abstract
Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.
Keywords
AlGaN/GaN heterostructures; oxy-gen; unintentional doping; SPEM;
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