• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1936-1939
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• 2004

This paper proposes streaming layer for personal robot's middleware. Under assumption that robot has open architecture, i.e. consists of modules created by different vendors and intercommunication between these modules is necessary, we have to consider that there are many different network interfaces. To make communication between modules possible it is necessary to develop new type of middleware. Such middleware has to support different platforms, i.e. OS, network interface, hardware, etc. In addition, it is necessary to implement effective interface between network and application in order to manage inter application communications and use network resources more effectively. Streaming layer is such interface that implements necessary functionality together with simplicity and portability. Streaming layer provides high level of abstraction and makes communication between distributed applications transparent as if are located in same module. With possibility of extension by user defined application interfaces it is suitable for distributed environments, i.e. module based architecture including small-embedded systems like as DSP board. To verify the proposed streaming layer structure it is implemented using C and tested.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.365-368
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• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.57 no.2
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• pp.115-124
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• 2024

In advancing Li-ion battery (LIB) technology, the solid electrolyte interface (SEI) layer is critical for enhancing battery longevity and performance. Formed during the charging process, the SEI layer is essential for controlling ion transport and maintaining electrode stability. This research provides a detailed analysis of how vinylene carbonate (VC) influences SEI layer formation. The integration of VC into the electrolyte markedly improved SEI properties. Moreover, correlation analysis revealed a connection between electrolyte decomposition and battery degradation, linked to the EMC esterification and dicarboxylate formation processes. VC facilitated the formation of a more uniform and chemically stable SEI layer enriched with poly(VC), thereby enhancing mechanical resilience and electrochemical stability. These findings deepen our understanding of the role of electrolyte additives in SEI formation, offering a promising strategy to improve the efficiency and lifespan of LIBs.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.13-19
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• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.2-418.2
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• 2016

$Al_2O_3$ passivation layer has excellent passivation properties at p-type Si surface. This $Al_2O_3$ layer forms thin $SiO_2$ layer at the interface. There were some studies about inserting thermal oxidation process to replace naturally grown oxide during $Al_2O_3$ deposition. They showed improving passivation properties. However, thermal oxidation process has disadvantage of expensive equipment and difficult control of thin layer formation. Wet chemical oxidation has advantages of low cost and easy thin oxide formation. In this study, $Al_2O_3$/$SiO_2/Si(100)$ interface was formed by wet chemical oxidation and PA-ALD process. $SiO_2$ layer at Si wafer was formed by $HCl/H_2O_2$, $H_2SO_4/H_2O_2$ and $HNO_3$, respectively. 20nm $Al_2O_3$ layer on $SiO_2/Si$ was deposited by PA-ALD. This $Al_2O_3/SiO_2/Si(100)$ interface were characterized by capacitance-voltage characteristics and quasi-steady-state photoconductance decay method.

• Journal of Adhesion and Interface
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• v.3 no.3
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• pp.22-29
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• 2002

UV curable coating system described here consists of double layers, namely under layer and top laser coatings. The former consists of organic-inorganic conductive materials and the latter consists of multifunctional acrylates. Transparent double layer coatings were prepared on the transparent substrates i.e. PMMA, PC, PET etc. by the wet and wet coating procedure. Their surface resistances and film properties were measured as a function of the top layer thickness and relative humidity. As the thickness of the top layer was less than $10{\mu}m$, the surface resistance in the range of $10^8{\sim}10^{10}{\Omega}/cm^2$ was obtained. The surface properties of the two-layer coating were remarkably improved compared with the single layer coating. The effects of migration of conducting materials on the film properties of multilayer coating were investigated by using contact angle and Fourier transform infrared/attenuated total reflection(FT-IR/ATR). It was found that the migration of dopant(dodecyl benzenesulfonic acid, DBSA) molecules were occurred from film-substrate interface to film-air interface in the organic conductive coating system but not in the inorganic one.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• Proceedings of the Korean Geotechical Society Conference
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• 2000.03b
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• pp.467-474
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• 2000

The application of Terzaghi's theory of consolidation for analysing the settlement of multi-layered soils is not strictly valid because the theory involves an assumption that the soil is homogeneous. The settlement of stratified soils with confined aquifer can be analysed using numerical techniques whereby the governing differential equation is replaced by 2-dimensional finite difference approximations. The problems of discontinuous layer interface are very important in the algorithm and programming for the analysis of multi-layered consolidation using a numerical analysis, finite difference method(F.D.M.). Better results can be obtained by the process for discontinuous layer interface, since it can help consolidation analysis to model the actual ground The purpose of this paper provides an efficient computer algorithm based on numerical analysis using finite difference method(F.D.M) which account for multi-layered soils with confined aquifer to determine the degree of consolidation and excess pore pressures relative to time and positions more realistically.