• Title/Summary/Keyword: Interface Bonding

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A Study on Characterization of P-N Junction Using Silicon Direct Bonding (실리콘 직접 본딩에 의한 P-N 접합의 특성에 관한 연구)

  • Jung, Won-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.615-624
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    • 2017
  • This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

Inhomogeneous bonding state modeling for vibration analysis of explosive clad pipe

  • Cao, Jianbin;Zhang, Zhousuo;Guo, Yanfei;Gong, Teng
    • Steel and Composite Structures
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    • v.31 no.3
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    • pp.233-242
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    • 2019
  • Early detection of damage bonding state such as insufficient bonding strength and interface partial contact defect for the explosive clad pipe is crucial in order to avoid sudden failure and even catastrophic accidents. A generalized and efficient model of the explosive clad pipe can reveal the relationship between bonding state and vibration characteristics, and provide foundations and priory knowledge for bonding state detection by signal processing technique. In this paper, the slender explosive clad pipe is regarded as two parallel elastic beams continuously joined by an elastic layer, and the elastic layer is capable to describe the non-uniform bonding state. By taking the characteristic beam modal functions as the admissible functions, the Rayleigh-Ritz method is employed to derive the dynamic model which enables one to consider inhomogeneous system and any boundary conditions. Then, the proposed model is validated by both numerical results and experiment. Parametric studies are carried out to investigate the effects of bonding strength and the length of partial contact defect on the natural frequency and forced response of the explosive clad pipe. A potential method for identifying the bonding quality of the explosive clad pipe is also discussed in this paper.

Cu/SiO2 CMP Process for Wafer Level Cu Bonding (웨이퍼 레벨 Cu 본딩을 위한 Cu/SiO2 CMP 공정 연구)

  • Lee, Minjae;Kim, Sarah Eunkyung;Kim, Sungdong
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.47-51
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    • 2013
  • Chemical mechanical polishing (CMP) has become one of the key processes in wafer level stacking technology for 3D stacked IC. In this study, two-step CMP process was proposed to polish $Cu/SiO_2$ hybrid bonding surface, that is, Cu CMP was followed by $SiO_2$ CMP to minimize Cu dishing. As a result, Cu dishing was reduced down to $100{\sim}200{\AA}$ after $SiO_2$ CMP and surface roughness was also improved. The bonding interface showed no noticeable dishing or interface line, implying high bonding strength.

Effects of Intermetallic Compounds Formed during Flip Chip Process on the Interfacial Reactions and Bonding Characteristics (플립칩 공정시 반응생성물이 계면반응 및 접합특성에 미치는 영향)

  • Ha, Jun-Seok;Jung, Jae-Pil;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.35-39
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    • 2012
  • We studied interfacial reaction and bonding characteristics of a flip chip bonding with the viewpoint of formation behavior of intermetallic compounds. For this purpose, Sn-0.7Cu and Sn-3Cu solders were reflowed on the Al/Cu and Al/Ni UBMs. When Sn-0.7Cu was reflowed on the Al/Cu UBM, no intermetallic compounds were formed at the solder/UBM interface. The $Cu_6Sn_5$ intermetallic compounds formed by reflowing Sn-3Cu solder on the Al/Cu UBM were spalled from the interface, resulting in delamination of the solder/UBM interface. On the other hand, the $(Cu,Ni)_6Sn_5$ intermetallic compounds were formed by reflowing of Sn-0.7Cu and Sn-3Cu on the Al/Ni UBM and the interfacial bonding between the Sn-Cu solders and the Al/Ni UBM was kept stable.

Laser Welding of Thermoplastics Using the Absorbing Materials (열가소성 플라스틱의 흡수체를 이용한 레이저 접합)

  • Seo M.H.;Ryu K.H.;Nam G.J.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.430-433
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    • 2005
  • Laser bonding between similar and dissimilar thermoplastics has been investigated by making use of laser transmission weld technique. Spot welding of two layers of plastic materials has been demonstrated by using of a high-quality diode-laser with 808nm wavelength. Weld areas increases according to power density, exposure time. The results of peel out test show that peel strengths increase with the area of molten plastics. Layers, which have the same chemical properties, have good bonding qualities. A bonding method which dye film is coated on the interface is used for laser bonding between plastics with high transmission for laser wavelength. Laser transmission bonding is worthy of attention because it is not in contact, requires a few tooling devices, allows a flexible energy delivery and produces nearly invisible welds

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Characterization of Silicon Structures with pn-junctions Fabricated by Modified Direct Bonding Technique with Simultaneous Dopant Diffusion (불순물 확산을 동시에 수행하는 수정된 직접접합방법으로 제작된 pn 접합 실리콘소자의 특성)

  • Kim, Sang-Cheol;Kim, Eun-dong;Kim, Nam-kyun;Bahng, Wook;Kostina, L.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.828-831
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    • 2001
  • A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.

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Development of Ultra-Clean Aligning/Mounting Process of FED Spacers using Electrostatic Bonding (정전 열 접합을 이용한 FED 스페이서의 초청정 정렬/탑재 공정 개발)

  • Ju, Byeong-Kwon;Kang, Moon-Sik;Lee, Yun-Hi
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.11
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    • pp.635-639
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    • 2000
  • In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.

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Analysis of Bonding Interfaces between Cemented Carbide and Stainless Steel made via Hot Vacuum Brazing (고온 진공 브레이징을 이용한 초경합금과 스테인리스강의 접합 계면 특성)

  • Park, D.H.;Hyun, K.H.;Kwon, H.H.
    • Transactions of Materials Processing
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    • v.29 no.6
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    • pp.307-315
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    • 2020
  • The cemented carbide and stainless steel were bonded using a hot-vacuum brazing method to analyze the bonding interface. Since it is suitable for the hot vacuum brazing, nickel metal was used as a binder among the main components of the cemented carbide, and a new cemented carbide material was developed by adjusting the alloy composition. The paste, which is one of the important factors affecting the hot vacuum brazing bonding, was able to improve brazing adhesion by mixing solder as Ni powder and a binder as an organic compound at an appropriate ratio. Division of the stainless steel yielded a dense brazing result. This study elucidated the interfacial characteristics of wear-resistant parts by bonding stainless steel and cemented carbide via hot vacuum brazing.

Deep Learning-Based Defect Detection in Cu-Cu Bonding Processes

  • DaBin Na;JiMin Gu;JiMin Park;YunSeok Song;JiHun Moon;Sangyul Ha;SangJeen Hong
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.135-142
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    • 2024
  • Cu-Cu bonding, one of the key technologies in advanced packaging, enhances semiconductor chip performance, miniaturization, and energy efficiency by facilitating rapid data transfer and low power consumption. However, the quality of the interface bonding can significantly impact overall bond quality, necessitating strategies to quickly detect and classify in-process defects. This study presents a methodology for detecting defects in wafer junction areas from Scanning Acoustic Microscopy images using a ResNet-50 based deep learning model. Additionally, the use of the defect map is proposed to rapidly inspect and categorize defects occurring during the Cu-Cu bonding process, thereby improving yield and productivity in semiconductor manufacturing.

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Bond Characteristics at the Interface between HMA Surface and RCC Base (아스팔트 표층과 RCC 기층 계면에서의 부착특성 연구)

  • Hong, Ki;Kim, Young Kyu;Bae, Abraham;Lee, Seung Woo
    • International Journal of Highway Engineering
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    • v.19 no.6
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    • pp.37-46
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    • 2017
  • PURPOSES : A composite pavement utilizes both an asphalt surface and a concrete base. Typically, a concrete base layer provides structural capacity, while an asphalt surface layer provides smoothness and riding quality. This pavement type can be used in conjunction with rollercompacted concrete (RCC) pavement as a base layer due to its fast construction, economic efficiency, and structural performance. However, the service life and functionality of composite pavement may be reduced due to interfacial bond failure. Therefore, adequate interfacial bonding between the asphalt surface and the concrete base is essential to achieving monolithic behavior. The purpose of this study is to investigate the bond characteristics at the interface between asphalt (HMA; hot-mixed asphalt) and the RCC base. METHODS : This study was performed to determine the optimal type and application rate of tack coat material for RCC-base composite pavement. In addition, the core size effect, temperature condition, and bonding failure shape were analyzed to investigate the bonding characteristics at the interface between the RCC base and HMA surface. To evaluate the bond strength, a pull-off test was performed using different diameters of specimens such as 50 mm and 100 mm. Tack coat materials such as RSC-4 and BD-Coat were applied in amounts of 0.3, 0.5, 0.7, 0.9, and $1.1l/m^2$ to determine the optimal application rate. In order to evaluate the bond strength characteristics with temperature changes, a pull-off test was carried out at -15, 0, 20, and $40^{\circ}C$. In addition, the bond failure shapes were analyzed using an image analysis program after the pull-off tests were completed. RESULTS : The test results indicated that the optimal application rate of RSC-4 and BD-Coat were $0.8l/m^2$, $0.9l/m^2$, respectively. The core size effect was determined to be negligible because the bond strengths were similar in specimens with diameters of 50 mm and 100 mm. The bond strengths of RSC-4 and BD-Coat were found to decrease significantly when the temperature increased. As a result of the bonding failure shape in low-temperature conditions such as -15, 0, and $20^{\circ}C$, it was found that most of the debonding occurred at the interface between the tack coat and RCC surface. On the other hand, the interface between the HMA and tack coat was weaker than that between the tack coat and RCC at a high temperature of $40^{\circ}C$. CONCLUSIONS : This study suggested an optimal application rate of tack coat materials to apply to RCC-base composite pavement. The bond strengths at high temperatures were significantly lower than the required bond (tensile) strength of 0.4 MPa. It was known that the temperature was a critical factor affecting the bond strength at the interface of the RCC-base composite pavement.