• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.21-26
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• 2018

In this paper, a multiple coupling inductor with expandable-integrated magnetic structure was proposed to enable miniaturization of external switched mode power supply (SMPS) for a large display. Inductance formula of the proposed inductor structure was derived through magnetic circuit analysis for a simple inductance designing process. The proposed inductor was applied into a 1kW class interleaved bridgeless power factor correction circuit which requires four inductors, and experimental steady state result of the circuit was compared. According to the experimental result, it was found that the proposed multiple coupling inductor shows the electrical characteristics that can replace the conventional separated inductors and is suitable for miniaturization of the SMPS since the circuit configuration is possible with one shared inductor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.6
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• pp.1-8
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• 2012

This paper presents a fully-integrated buck converter equipped with packaging inductors. These inductors include parasitic inductances of the bonding wires and lead frames in the package. They have significantly better Q factors than the best on-chip inductors implemented on silicon. This paper also proposes a low-swing gate driver for efficient regulation of high-frequency switching converters. The low-swing driver uses the voltage drop of a diode-connect transistor. The proposed converter is designed and fabricated using a $0.13-{\mu}m$ CMOS process. The fully-integrated buck converter achieves 68.7% and 86.6% efficiency for 3.3 V/2.0 V and 2.8 V/2.3 V conversions, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.89-93
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• 2002

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.711-712
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.109-111
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• 2006

This paper presents characterization and analysis of integrated ferromagnetic inductors in RF regime. Two different materials (CoFe/NiFe) are used as ferromagnetic material. Systematic studies of the inductance (L), the Q-factor (Q) and the structure of the inductor have been performed.

• Proceedings of the KIPE Conference
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• 2008.06a
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• pp.406-409
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• 2008

This paper presents the integrated magnetic circuit designing method for phase shift full bridge(PSFB) converter. The integrated magnetic circuit is implemented on redesigned of EI core. The transformer windings are located on center leg and the two inductors are located on the outer legs with air gap. Based on the equivalent circuit model, the principle of operation of the PSFB converter is explained. The operation and performance of the proposed circuit are verified on a 1.2 kW prototype converter. The analysis and design of the integrated magnetic circuit is verified through the experimental and simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.83-87
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• 2003

In the present paper we suggested a parallel branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on p-type silicon wafer (5∼15Ω-cm) under the standard CMOS process and it showed a enhanced qualify(Q) factor by more than 10 % with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with conventional spital inductors

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.356-360
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• 2014

In this paper, the effect of underpass structure on quality factor and breakdown voltage of octagonal inductors which were fabricated with 90 nm complementary metal-oxide-semiconductor (CMOS) technology for radio frequency integrated circuit (RFIC) was studied. It was found that quality factor and breakdown voltage of inductors with more than one metal layer for underpass showed improved properties compared to those with one metal layer. However, little change of quality factor and breakdown voltage was observed between the inductors with two and more than two metal layers for underpass. Therefore, underpasses with two metal layers are promising for RFIC designs of the octagonal inductors in 90 nm CMOS technology.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.31-36
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• 2000

We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.