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http://dx.doi.org/10.4313/JKEM.2014.27.6.356

Effect of Uderpass Structure on Quality Factor and Breakdown Voltage in RF Inductor  

Shin, Jong-Kwan (Department of Electronics Engineering, Chungnam National University)
Kwon, Sung-Kyu (Department of Electronics Engineering, Chungnam National University)
Jang, Sung-Yong (Department of Electronics Engineering, Chungnam National University)
Jung, Jin-Woong (Department of Electronics Engineering, Chungnam National University)
Yu, Jae-Nam (Department of Electronics Engineering, Chungnam National University)
Oh, Sun-Ho (Department of Electronics Engineering, Chungnam National University)
Kim, Choul-Young (Department of Electronics Engineering, Chungnam National University)
Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University)
Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.6, 2014 , pp. 356-360 More about this Journal
Abstract
In this paper, the effect of underpass structure on quality factor and breakdown voltage of octagonal inductors which were fabricated with 90 nm complementary metal-oxide-semiconductor (CMOS) technology for radio frequency integrated circuit (RFIC) was studied. It was found that quality factor and breakdown voltage of inductors with more than one metal layer for underpass showed improved properties compared to those with one metal layer. However, little change of quality factor and breakdown voltage was observed between the inductors with two and more than two metal layers for underpass. Therefore, underpasses with two metal layers are promising for RFIC designs of the octagonal inductors in 90 nm CMOS technology.
Keywords
Quality factor; Breakdown voltage; Effective inductance; Underpass;
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Times Cited By KSCI : 1  (Citation Analysis)
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