• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.11
• /
• pp.2697-2702
• /
• 2014

In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

• Journal of Information Technology Services
• /
• v.14 no.3
• /
• pp.183-196
• /
• 2015

The concept of energy-efficient networking has begun to spread in the past few years, gaining increasing popularity. A common opinion among networking researchers is that the sole introduction of low consumption silicon technologies may not be enough to effectively curb energy requirements. Thus, for disruptively boosting the network energy efficiency, these hardware enhancements must be integrated with ad-hoc mechanisms that explicitly manage energy saving, by exploiting network-specific features. The IEEE 802.3az Energy Efficient Ethernet (EEE) standard is one of such efforts. EEE introduces a low power mode for the most common Ethernet physical layer standards and is expected to provide large energy savings. However, it has been shown that EEE may not achieve good energy efficiency because mode transition overheads can be significant, leading to almost full energy consumption even at low utilization levels. Coalescing techniques such as packet coalescing and interrupt coalescing were proposed to improve energy efficiency of EEE, but their implementations typically adopt a simple policy that employs a few fixed values for coalescing parameters, thus it is difficult to achieve optimal energy efficiency. The paper proposes adaptive interrupt coalescing (AIC) that adopts an optimal policy that could not only improve energy efficiency but support performance. AIC has been implemented at the sender side with the Intel 82579 network interface card (NIC) and e1000e Linux device driver. The experiments were performed at 100 M bps transfer rate and show that energy efficiency of AIC is improved in most cases despite performance consideration and in the best case can be improved up to 37% compared to that of conventional interrupt coalescing techniques.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.2
• /
• pp.829-834
• /
• 2011

Exposure process is the most important technology to fabricate highly integrated circuit. Up to now, mask type lithography process has been generally used. However, it is not efficient for small quantity and/or frequently changing products. Therefore, maskless lithography technology is raised in exposure process. In this study, relations between multi-beam energy and overlay were analyzed. Exposure experiment of generating pattern was performed. It was from presented scan line by multi- beam simulation. As a result, optimal scan line distance was proposed by simulation, and micro pattern accuracy could be improved by exposure experiment using laser direct imaging system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.701-709
• /
• 2011

In semiconductor wafer fabrication, etching is one of the most critical processes, by which a material layer is selectively removed. Because of difficulty to correct a mistake caused by over etching, it is critical that etch should be performed correctly. This paper proposes a new approach for etch endpoint detection of small open area wafers. The traditional endpoint detection technique uses a few manually selected wavelengths, which are adequate for large open areas. As the integrated circuit devices continue to shrink in geometry and increase in device density, detecting the endpoint for small open areas presents a serious challenge to process engineers. In this work, a high-resolution optical emission spectroscopy (OES) sensor is used to provide the necessary sensitivity for detecting subtle endpoint signal. Partial Least Squares (PLS) method is used to analyze the OES data which reduces dimension of the data and increases gap between classes. Support Vector Machine (SVM) is employed to detect endpoint using the data after PLS. SVM classifies normal etching state and after endpoint state. Two data sets from OES are used in training PLS and SVM. The other data sets are used to test the performance of the model. The results show that the trained PLS and SVM hybrid algorithm model detects endpoint accurately.

• Journal of Sensor Science and Technology
• /
• v.14 no.2
• /
• pp.96-100
• /
• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.12
• /
• pp.1122-1127
• /
• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.37 no.3
• /
• pp.293-300
• /
• 2009

The rotorcraft-based unmanned aerial vehicle(UAV) capable of performing close-range surveillance and reconnaissance has been developed. Trade studies on mission feasibility led to the adoption of a coaxial rotorcraft with twin rotors counter-rotating in one axis and driven by electric motors. A commercial off-the-shelf flight control computer(FCC) and a radio frequency modem were adopted for autonomous navigation. In order to achieve an aerial view, commercial charge-coupled device camera was also integrated into the vehicle. The performance of the completed vehicle was proved with manual flight test, and mission capability was verified through waypoint navigation flight after being equipped with FCC. This paper treats the whole process of design and system integration for development of the coaxial rotorcraft UAV.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.36 no.6
• /
• pp.587-593
• /
• 2008

Transdermal and topical drug delivery with minimal tissue damage has been an area of vigorous research for years. Our research team has initiated the development of an effective method for delivering drug particles across the skin (transdermal) for systemic circulation, and to localized (topical) areas. The device consists of a laser ablation based micro-particle acceleration system that can be integrated with endoscopic surgical techniques. We have successfully delivered 3μm size cobalt particles into gelatin models that represent soft tissue with remarkable penetration depth.

• Journal of Electrical Engineering and Technology
• /
• v.7 no.2
• /
• pp.178-183
• /
• 2012

The design of the integrated quench protection (QP) system for the high current superconducting magnet (SCM) has been fabricated and tested for the toroidal field (TF) coil system of the Korea Superconducting Tokamak Advanced Research (KSTAR) device. The QP system is capable of protecting the TF SCM, which consists of 16 identical coils serially connected with a stored energy of 495 MJ at the design operation level at 35.2 kA per turn. Given that the power supply for the TF coils can only ramp up and maintain the coil current, the design of the QP system includes two features. The first is a basic fast discharge function to protect the TF SCM by a dump resistor circuit with a 7 s time constant in case of coil quench event. The second is a slow discharge function with a time constant of 360 s for a daily TF discharge or for a stop demand from the tokamak control system. The QP system has been successfully tested up to 40 kA with a short circuit and up to 34 kA with TF SCM in the second campaign of KSTAR. This paper describes the characteristics of the TF QP systems and test results of the plasma experiment of KSTAR in 2009.

• Journal of the Korean Society of Safety
• /
• v.29 no.1
• /
• pp.47-53
• /
• 2014

The application of advanced Main Control Room(MCR) is accompanied with lots of changes and different forms and features through the virtue of new digital technologies. The characteristics of these digital technologies and devices give many opportunities to the interface management, and can be integrated into a compact single workstation in advanced MCR so that workers can operate the plant with minimum physical burden under any operation conditions. However, these devices may introduce new types of human errors and thus a means to evaluate and prevent such errors is needed, especially those related to characteristics of digital devices. This paper reviewed the new type of human error hazards of tasks based on digital devices and surveyed researches on physiological assessment related to human error. An experiment was performed to verify human error hazards by physiological responses such as EEG which was measured to evaluate the cognitive workload of operators. And also, the performances of four tasks which are representative in human error hazard tasks based on digital devices were compared. Response time, ${\beta}$ power spectrum rate of each task by EEG, and mental workload by NASA-TLX were evaluated. In the results of the experiment, the rate of the ${\beta}$ power was increased in the task 1 and task 4 which are searching and navigating task and memory task of hierarchical information, respectively. In case of the mental workload, in most of evaluation items, task 1 and 4 were highly rated comparatively. In this paper, human error hazards might be identified by highly cognitive workload. Conclusively, it was concluded that the predictive method which is utilized in this paper and an experimental verification can be used to ensure the safety when applying the digital devices in Nuclear Power Plants (NPPs).