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http://dx.doi.org/10.6109/jkiice.2014.18.11.2697

High Performance Ku-band 2W MMIC Power Amplifier for Satellite Communications  

Ryu, Keun-Kwan (Department of Electronics & Control Engineering, Hanbat National University)
Ahn, Ki-Burm (ASB Inc.)
Kim, Sung-Chan (Department of Electronics & Control Engineering, Hanbat National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.11, 2014 , pp. 2697-2702 More about this Journal
Abstract
In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.
Keywords
power amplifier; Ku-band; 2W; PHEMT; MMIC;
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