• Journal of Broadcast Engineering
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• v.13 no.4
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• pp.528-543
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• 2008

Internet Protocol Television (IPTV) provides an interactive and personalized service for realizing integrated broadcasting and telecommunication services. Set-top box (SIB) connected to TV is an essential component required for IPTV and has a unique hardware identifier used in identification and authentication. It means that subscriber authentication based on box-level identification is inconsistent with IPTV's main intention of providing personalized services. The proposed solution is to provide an opportunity to use the flexible user-centric authentication mechanism through Java Card applets in IPTV application server and 3G networks. This paper suggests personalized services by moving the user's private data and authentication management beyond the STB to a truly personalized device, the ubiquitous mobile phone. In addition, this paper presents effectiveness and security analysis for verifying the proposal.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.1-10
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• 2009

As a demand for the portable device requiring smaller size and better performance is in hike, reducing the size of conventionally used planar 2 dimensional chip cannot be a solution for the enhancement of the semiconductor chip technology due to an increase in RC delay among interconnects. To address this problem, a new technology - "3 dimensional (3D) IC chip stack" - has been emerging. For the integration of the technology, several new key unit processes (e.g., silicon through via, wafer thinning and wafer alignment and bonding) should be developed and much effort is being made to achieve the goal. As a result of such efforts, 4 and 8 chip-stacked DRAM and NAND structures and a system stacking CPU and memory chips vertically were successfully developed. In this article, basic theory, configurations and key unit processes for the 3D IC chip integration, and a current tendency of the technology are explained. Future opportunities and directions are also discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.1-7
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• 2016

Although the second driving device of KTX, which consists of the wheel and the axle reduction gears unit, is a mechanically integrated structure, its preventive maintenance (PM) requires two separate intervals due to the different technical requirements. In particular, these subsystems perform attaching and detaching work simultaneously according to the maintenance directive. Therefore, to reduce the unnecessary amount of PM and high logistic availability of the train, it is important to optimize PM with regard to reliability-centered maintenance toward a cost-effective solution. In this study, fault tree analysis and reliability of the subsystems, considering the criticality of the components, were performed using the data derived from field data in maintenance. The cost optimization of the PM was derived from a genetic algorithm considering the target reliability and improvement factor. The cost optimization was derived from a maximum of the fitness function of the individual in generation. The optimal TBO of them using the genetic algorithm was 2.85x106 km, which is reduced to approximately 21% compared to the conventional method.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.7
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• pp.209-218
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• 2014

An AP that is used by smart device is going to be complicated because smart devices support diverse functions. As a result, multiple low-level IPs including a dedicated CPU are integrated in a high-level subsystem for supporting complicated function such as multimedia codec and camera. A subsystem has software that executes separately from main system, and the software needs to be initialized for every execution of the subsystem. This causes increase of the subsystem startup time so it should be improved because startup time of subsystem affects launching time of application. Methods in applied to computer system for fast startup also could be applied to fast startup of subsystem because subsystem is similar with computer system. In this paper, we apply snapshot method that is used in computer system to subsystem and analyzes the pros and cons. And snapshot method could not be applied to register of IP without modification because register of IP offers restricted read and write. So this paper suggests technique that applying snapshot to each characteristic of register.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of Korean Society for Atmospheric Environment
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• v.27 no.6
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• pp.734-745
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• 2011

In this article, we reviewed the monitoring status of hazardous VOC in ambinet air in Korea and some developed countries such as USA, Japan, and UK. In many countries, two types of VOC monitoring stations are being operated, i.e., for hazardous VOC and photochemical VOC. Each country has different target VOC but all includes benzene. Korea, Japan, and UK have a national ambient air quality standard for benzene, but no national standard has been established in the USA. For sampling of the hazardous VOC, the adsorbent method is adopted in Korea and UK, while the canister method is used in the USA. Both of adsorbent and canister methods are used in Japan. USA and UK have only non-automatic method to measure the hazardous VOC, and the individual samples are being sent to their national laboratories for integrated analysis. On the other hand, Korea and Japan have automatic and nonautomatic methods to measure the hazardous VOC. Local governments or regional environmental agencies in Korea and Japan have the authorization for the sampling and analysis of VOC. According to a field study to evaluate the performance of automatic VOC monitoring system, controlling the moisture in the air sample was identified as the most important problem. However, careful attention must be given to using a moisture removing device such as Nafyon dryer, because of unexpected artifacts formation. In order to have reliable data, it is highly recommended not only to use internal standards, but to use appropriate hydrophobic adsorbents as a cold trap in any automatic on-line VOC monitoring system.

• The Journal of the Korea Contents Association
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• v.19 no.11
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• pp.12-21
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• 2019

In the era of the Fourth Industrial Revolution, drones have become a flexible device that can be integrated with new technologies. The drones were originally developed as military unmanned aircraft and are now being used in various fields. In the environment and weather observation area, the atmospheric boundary layer is near the surface where the atmosphere is the most active in the meteorological phenomenon and has a close influence on human activities. In order to carry out the study of these atmospheric boundary layers, it is necessary to observe precisely the lower atmosphere and secure the observation technology. The drones in the meteorological field can be used for meteorological observations at a relatively low maintenance cost compared to existing equipment. When used in conjunction with various sensors, the drones can be widely used in atmospheric boundary layer and local meteorological studies. In this study, the possibility of meteorological observations using drones was confirmed by conducting vertical meteorological (temperature and humidity) observation experiments equipped with a combined meteorological sensor and a radio sonde on drones owned by NIMS.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.20-27
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• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.