Electrical/Dielectric Characterization of 2-Dimenisonal Electron Gas Layers Formed between LaAlO3 and SrTiO3

  • Park, Chan-Rok (Department of Mat. Sci. and Eng., Hongik University) ;
  • Kwon, Kyeong-Woo (Department of Mat. Sci. and Eng., Hongik University) ;
  • Do, Woo-ri (Department of Mat. Sci. and Eng., Hongik University) ;
  • Park, Da-Hee (Department of Mat. Sci. and Eng., Hongik University) ;
  • Baek, Senug-Hyub (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, Jin Sang (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Hwang, in-Ha (Department of Mat. Sci. and Eng., Hongik University)
  • Published : 2014.02.10

Abstract

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

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