• 조명전기설비학회논문지
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• 제13권1호
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• pp.53-59
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• 1999

$(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ 세라믹 커패시터는 ZnO를 0.1~0.4몰로 변화시켜 시편을 제조하였다. 본 연구에서는 고전압용 세라믹 커패시터의 구조적 및 전기적 특성에 관하여 연구하였다. 세라믹 커패시터의 상대밀도는 모든시료에서 높았다. 입자의 크기는 $1.0~1.22[\mum]$ 정도의 작은 크기이었으며 ZnO의 첨가량이 0.3몰일 때 가장 크게 성장하였다. 입자의 크기가 클 때 시정수는 증가하였다. 세라믹 커패시터의 온도계수는 0.12~10[kHz]에서 100[ppm]이하로 온도변화에 대해 유전율이 안정하였다. 유전 완화시간은 $[110^{\circ}C]$이상에서 계면분극의 영향으로 감소하였으며 $110[^{\circ}C]$이하에서는 상유전층의 공간전하 분극에 의해서 유전 완화시간이 증가하였다. 유전특성에 영향을 주는 절연층의 두께가 ZnO에 의해서 증가하였으며 유전율의 변화는 0.1[%]로 전압의 변동에 대해 유전율이 안정하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 폴리머
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• 제26권5호
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• pp.623-633
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• 2002

적인을 이용한 ortho-cresol novolac (OCN)과 biphenyl계 혼합 에폭시 수지 조성물의 열적 특성과 난연 특성을 검토하였다. OCN과 biphenyl 에폭시의 부피비에 따라 5가지 조성물을 디자인하였으며, TGA 및 DTG, 그리고 UL-94V 테스트를 통해 난연 효과를 평가하였다. 충전제와 적인의 함량이 증가할수록 열적 성질 및 우수한 난연 효과를 보였으나, 과량의 적인을 적용하였을 경우에는 열안정성의 저하를 유발하였다. 복합재료의 기저 수지호서 OCN/biphenyl 혼합 에폭시를 사용하였을 경우 OCN의 내열특성과 biphenyl 에폭시의 높은 발포 특성에 기인하여 보다 향상된 난연 특성을 확보할 수 있었다. 적인을 적용한 에폭시 수지 조성물의 난연 기구는 표면에서 형성된 발포성 탄화층 (char-layer)의 열적 방어 효과로 판단할 수 있었다.

• Corrosion Science and Technology
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• 제18권5호
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• pp.212-219
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• 2019

This paper reviews recent approaches to develop composite polymer-containing coatings by plasma electrolytic oxidation (PEO) using various low-molecular fractions of superdispersed polytetrafluoroethylene (SPTFE). The features of the unique approaches to form the composite polymer-containing coating on the surface of MA8 magnesium alloy were summarized. Improvement in the corrosion and tribological behavior of the polymer-containing coating can be attributed to the morphology and insulating properties of the surface layers and solid lubrication effect of the SPTFE particles. Such multifunctional coatings have high corrosion resistance ($R_p=3.0{\times}10^7{\Omega}cm^2$) and low friction coefficient (0.13) under dry wear conditions. The effect of dispersity and ${\xi}$-potential of the nanoscale materials ($ZrO_2$ and $SiO_2$) used as electrolyte components for the plasma electrolytic oxidation on the composition and properties of the coatings was investigated. Improvement in the protective properties of the coatings with the incorporated nanoparticles was explained by the greater thickness of the protective layer, relatively low porosity, and the presence of narrow non-through pores. The impedance modulus measured at low frequency for the zirconia-containing layer (${\mid}Z{\mid}_{f=0.01Hz}=1.8{\times}10^6{\Omega}{\cdot}cm^2$) was more than one order of magnitude higher than that of the PEO-coating formed in the nanoparticles-free electrolyte (${\mid}Z{\mid}_{f=0.01Hz}=5.4{\times}10^4{\Omega}{\cdot}cm^2$).

• 한국재료학회지
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• 제29권9호
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• pp.542-546
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• 2019

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.15-18
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• 2022

The ultraviolet-C emitting praseodymium doped yttrium phosphate (YPO₄:Pr³⁺) powder was synthesized by conventional solid-state reaction. The electroluminescence device was fabricated by simple screen-printing method using the synthesized YPO₄:Pr³⁺ powder, especially, polyvinylidene fluoride as an insulating layer was applied on the printed YPO₄:Pr³⁺ powder for stable performance of the electroluminescence. The electroluminescence properties were investigated under alternating current power system of 400 Hz. The device starts to emit at 350 V, which showed the ultraviolet-C emission peaking at the 233, 245, 264, 273 nm attributed to electronic transition of the Pr³⁺ ions. The electroluminescence intensity was increased as increasing the operating voltage and the device revealed stable performance up to 600 V due to the polyvinylidene fluoride serve as a protective layer.

• 한국재료학회지
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• 제14권8호
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• pp.542-546
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• 2004

We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1679-1681
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• 2004

Class-F and B resin-rich type insulating tapes are generally used for the ground wall insulations of respective air-cooled and water-cooled stator windings in larger turbine generators. In this paper, their electrical properties coupled with aging times in higher temperature than designed one in normal condition were experimentally investigated and the results of two comparative tests were presented on the existing class-F resin-rich type tape and a developed one after curing. The resin-rich tapes currently used arc composed of six and a half 3-layer sheets that arc structured with mica paper, the top and bottom supports of it respectively, and the epoxy resin to bind them tightly. The results for breakdown voltage and strength on the cured specimens were presented, which were composed of the unaged, the aged accelerated for one, two, and three thousand hours at 180 $^{\circ}C$. The surface and volume resistivities on them were measured and the results are also presented to make a comparative test for the initial electrical characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1137-1139
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• 1995

$SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.