• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1566-1571
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• 2003

The cold plate used for a CEU(Control Electronics Unit) of an EV(Electric Vehicle) is extremely important since the dissipation of the heat generated from power devices like IGBT(Insulated Gate Bipolar Transistor) and diode has a significant effect on the performance as well as the durability of the CED. The cold plate consists of seven power devices, and coolant flows through the passage bonded to a groove of the cold plate. In order to find out heat transfer and pressure drop characteristics, series of numerical analyses for the cold plate with enhanced coolant passages were conducted. Based on results of the numerical analyses, an improved model of the cold plate has been proposed. The experiments under the various conditions have been conducted to compare the performance of the proposed cold plate to the present one. As a result of the numerical analyses together with the experiments, the ideal design of the cold plate could be offered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Journal of Power Electronics
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• v.16 no.2
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• pp.522-531
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• 2016

This paper proposes a new NLC (Nearest Level Control) scheme for MMCs (Modular Multilevel Converters), which offers voltage ripple reductions in the DC capacitor of the SM (Sub-Module), the output voltage harmonics, and the switching losses. The feasibility of the proposed NLC was verified through computer simulations. Based on these simulation results, a hardware prototype of a 10kVA, DC-1000V MMC was manufactured in the lab. Experiments were conducted to verify the feasibility of the proposed NLC in an actual hardware environment. The experimental results were consistent with the results obtained from the computer simulations.

• Journal of Power Electronics
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• v.16 no.2
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• pp.532-541
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• 2016

A single-phase asymmetrical cascaded multilevel inverter is introduced with the goal of increasing power quality with the reduction of power in insulated-gate bipolar transistor (IGBT) switches. In the present work, the proposed inverter topology is analyzed and generalized with respect to different proposed algorithms for choosing different voltage source values. To prove the advantages of the proposed inverter, a case study involving a 17-level inverter is conducted. The simulation and experimental results with reduced THD are also presented and compared with the MATLAB/SIMULINK simulation results. Finally, the proposed topology is compared with different multilevel inverter topologies available in the literature in terms of the number of IGBT switches required with respect to the number of levels generated in the output of inverter topologies.

• Journal of Power Electronics
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• v.16 no.2
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• pp.778-785
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• 2016

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.374-377
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• 2003

In this paper, turn on characteristics of (Punch-Through Insulated Gate Bipolar Transistor) PT-IGBT has been studied. Based on the transient power loss, turn on charges first base to collector capacitance. Furthermore we present the charge variation in the base including n+ buffer layer to express the transient turn-on characteristics of the device.

• Transactions of the Korean Society of Automotive Engineers
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• v.22 no.2
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• pp.1-6
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• 2014

In-wheel driving inverter inside engine room sometimes operates in the harsh environment like high temperature of about $105^{\circ}C$. Especially, the size and power density of the inverter has become smaller and more increased. Thus, it is essential to manage the temperature of the inverter with IGBT (Insulated Gate Bipolar Transistor) switching devices for performance and endurance, because the temperature can be getting increase. In this paper, we performed the thermal flow analysis of inverter models with wave type and pin fin type cooling channels, and investigated the heat transfer characteristics of the inverter models using cooling water on channels at 8 L/min and $65^{\circ}C$. Also, we compared the thermal performance under various conditions such as coolant flow rate and layered power module structure. Therefore, we determined the feasibility of the initial inverter models and the thermal performance enhancement.

• International Journal of Automotive Technology
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• v.4 no.2
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• pp.57-64
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• 2003

The Intelligent Power Unit (IPU) utilized in Honda's Civic Hybrid Integrated Motor Assist (IMA) system was developed with the aim of making every component lighter, more compact and more efficient than those in the former model. To reduce energy loss, inverter efficiency was increased by fine patterning of the Insulated Gate Bipolar Transistor (IGBT) chips, 12V DC-DC converter efficiency was increased by utilizing soft-switching, and the internal resistance of the IMA battery was lowered by modifying the electrodes and the current collecting structure. These improvements reduced the amount of heat generated by the unit components and made it possible to combine the previously separated Power Control Unit (PCU) and battery cooling systems into a single system. Consolidation of these two cooling circuits into one has reduced the volume of the newly developed IPU by 42% compared to the former model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.30-31
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• 2008

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthroug(NPT) Insulated Gate Bipolar Transistor with heatsink areas has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data by thermocam.