Thermal Distribution Modeling of IGBT with heatsink areas

히트싱크 면적에 따른 IGBT의 열 분포 모델링

  • Ryu, Se-Hwan (Department of Electrical Engineering, Konkuk University) ;
  • Hong, Jong-Kyoung (Department of Electrical Engineering, Konkuk University) ;
  • Won, Chang-Sub (Department of Electrical Engineering, Konkuk University) ;
  • Ahn, Hyung-Keun (Department of Electrical Engineering, Konkuk University) ;
  • Han, Deuk-Young (Department of Electrical Engineering, Konkuk University)
  • Published : 2008.06.19

Abstract

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability. In this paper, thermal distribution of the Non Punchthroug(NPT) Insulated Gate Bipolar Transistor with heatsink areas has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data by thermocam.

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