• Journal of Power Electronics
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• 제18권6호
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• pp.1901-1911
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• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.23-28
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• 2008

In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.25-28
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• 2000

In this study, Transient Characteristics of the Punch-Through Insulated Gate Bipolar Transistor (PT-IGBT) has been studied. On the contraty to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), PT-IGBT has buffer layer It has a simple drive circuit controlled by the gate voltage of the MOSFET and the low on-state resistance of the bipolar junction transistor. In this paper, the transient characteristics with temperature of the PT-IGBT has been analyzed analytically. PT-IGBT is made to reduce switching power loss. Excess Minority carrier distribution inactive base region and base charge, the rate of voltage with time is expressed analytically to include buffer layer.

• ETRI Journal
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• 제31권5호
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• pp.604-606
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• 2009

The primary dose effects on an insulated gate bipolar transistor (IGBT) irradiated with a $^{60}Co$ gamma-ray source are found in both of the components of the threshold shifting due to oxide charge trapping in the MOS and the reduction of current gain in the bipolar transistor. In this letter, the IGBT macro-model incorporating irradiation is implemented, and the electrical characteristics are analyzed by SPICE simulation and experiments. In addition, the collector current characteristics as a function of gate emitter voltage, VGE, are compared with the model considering the radiation damage of different doses under positive biases.

• 설비공학논문집
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• 제30권1호
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• pp.1-9
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• 2018

Thermal performance of a heat sink for an inverter power stack was analyzed in terms of array and installation location of an Insulated Gate Bipolar Transistor (IGBT). Thermal flow around the heat sink was calculated with a numerical model that could simulate forced convection. Thermal performance was calculated depending on the array and location of high- and low-power IGBTs considering the maximum temperature of IGBT. The optimum array and installation location were found and causes were analyzed based on results of numerical analysis. For the numerical analysis, experiment design considered the installation location of IGBT, ratio of heat generation rates of high- and low-power IGBTs, and velocity of the inlet air as design variables. Based on numerical results, a correlation that could calculate thermal performance of the heat sink was suggested and the maximum temperature of the IGBT could be predicted depending on the installation method.

• 한국철도학회논문집
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• 제20권3호
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• pp.339-348
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• 2017

철도차량용 전원창치는 추진제어용 전원장치와 보조전원장치로 구분된다. 추진제어용 전원장치는 철도차량의 추진 및 회생제동 등의 동작을 위한 것이며, 보조전원장치는 추진제어용 전원을 제외한 공기압축기, 조명기기, 차량제어전원 등의 보조전원에 사용되는 것이다. 각 전원장치는 고전압, 고전류 사양 특성에 따라 일반적으로 insulated-gate bipolar transistor (IGBT)를 스위칭 소자로 사용하고 있다. 스위칭 소자를 사용하기 위해서는 적절한 스위칭 동작을 구현하기 위한 구동회로(Gate Driver Unit, GDU)가 필수적이다. 본 논문에서는 철도차량에 적용되고 있는 IGBT용 GDU에 적용되고 있는 기술 동향을 분석하고 철도차량용 IGBT GDU 설계 시 고려사항에 대해 알아보고자 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1469-1471
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• 2001

A Dual Channel Trench IGBT (Insulated Gate Bipolar Transistor) is proposed to improve the latch-up characteristics. Simulation results by MEDICI have shown that the latching current density of proposed device was found to be 2850 A/$cm^2$ while that of conventional device was 1610 A/$cm^2$. The latching current desity of the proposed strucutre was 77.02% higher than that of conventional structre.

• 전력전자학회지
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• 제22권1호
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• pp.42-50
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• 2017

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.