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http://dx.doi.org/10.4313/JKEM.2008.21.1.023

Modeling of Anode Voltage Drop for PT-IGBT at Turn-off  

Ryu, Se-Hwan (건국대학교 전기공학과)
Lee, Ho-Kil ((주) 삼성전자 반도체총괄 메모리사업부)
Ahn, Hyung-Keun (건국대학교 전기공학과)
Han, Deuk-Young (건국대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.1, 2008 , pp. 23-28 More about this Journal
Abstract
In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.
Keywords
PT-IGBT; Buffer layer; Carrier distiribution; Modeling;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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