• Journal of Industrial Technology
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• v.37 no.1
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• pp.27-31
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• 2017

In this paper, we have extended the research on the infrared sensor which has been limited to the plane. The reflection mechanism of the light on the curved surface is analyzed according to the curvature change and the emitted angle of photodiode and verified through experiments. The difference in the curvature causes a difference in the measurement distance, and also changes the intensity of the light coming into the phototransistor, thereby causing a difference in the output voltage. However, the difference in the output voltage due to the curvature change can be solved by adjusting the emitted angle of the photodiode to minimize the spot area formed on the curved surface regardless of the curvature. Therefore, it is possible to measure the distance by using the infrared sensor regardless of the curvature by aligning the photodiode to the center of the curved surface and adjusting the angle of the photodiode.

• Current Optics and Photonics
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• v.5 no.2
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• pp.129-133
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• 2021

This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

• Current Optics and Photonics
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• v.7 no.2
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Analytical Science and Technology
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• v.20 no.4
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• pp.289-295
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• 2007

A simple electric circuit of an infrared photodiode electrode (IPDE) was utilized to monitor iron using square-wave (SW) anodic stripping voltammetry (SV) and cyclic voltammetry (CV). The optimum analytical conditions were determined and were compared with those of common working electrodes. The comparison showed that CV is more sensitive and convenient to use than the common voltammetry methods. At the optimized conditions, the working ranges of 0.1- to 0.8- and 0.85- to 6.0 mg/L iron was obtained. Relative standard deviation of 15 measurements of iron (0.4 mg/L) was 0.09%. The analytical detection limit was found to be $80{\pm}0.6ug/L$, which was applied to iron in waste water.

• Proceedings of the KOSOMBE Conference
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• v.1993 no.05
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• pp.116-119
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• 1993

In this paper, we implemented a pulse wave type oximeter system that continuously measure the of oxyhemoglobin saturation of the arterial blood(SaO2) and pulse rate with non-invasively. We use the transmission type and reflection type transducer for comparison the percentage of hemoglobin oxgen saturation. The light Iron the two kind of LEDs is transmitted through the tissue, then received by a single photodiode with alternatively. By the phase sensitive detection circuit, the output of the photodiode is separated in to red and near infrared signal. We calculated a ratio of light transmittance between two kind of LEDs, and then, it is applied to the oxgen saturation coefficent calculation formular.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.5
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• pp.555-560
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.3115-3115
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• 2001

In this study, portable near infrared (NIR) system was newly integrated with a photodiode array detector, which has no moving parts and this system has been successfully applied for evaluation of human skin moisture. The good correlation between NIR absorbance and absolute water content of separated hairless mouse skin was, in vitro, showed depending on the water content (7.42-84.94%) using this portable NIR system. Partial least squares (PLS) regression was used for the calibration with the 1100-1650 nm wavelength range. For the practical use for the evaluation of human skin based on moisture, PLS model for human skin moisture was, in vivo, developed using the portable NIR system based on the relative water content values of stratum corneum from the conventional capacitance method. The PLS model showed a good correlation. This study indicated that the portable NIR system could be a powerful tool for human skin moisture, which may be much more stable to environmental conditions such as temperature and humidity, compared to conventional methods. Furthermore, in order to confirm the performance of newly integrated portable NIR system, scanning type conventional NIR spectrometer was used in the same experiments and the results were compared.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1967-1969
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• 2003

본 논문에서는 무인 주행 저속 전기 자동차 시스템 개발을 위한 적외선 LED 라인트레이서를 제작하였다. 햇빛에 의한 영향을 제거하기 위해 적외선 LED를 펄스(pulse)로 구동시켰으며 흰색선에서 반사된 적외선 신호를 photodiode를 이용하여 감지하였다. 감지된 신호는 증폭단과 Peak Detector를 거쳐 최종적으로 AVR MCU로 입력이 된 후 여러 상황에 따른 차량의 방향을 결정할 수 있도록 알고리즘를 통해 처리하였다. 실험을 통하여 본 논문에서 제작한 라이트레이서 모듈이 원하는 방향으로 동작함을 확인하였다.

• Toxicological Research
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• v.33 no.2
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• pp.135-140
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• 2017

The cobalt (Co(II)) ion is a main component of alloys and considered to be carcinogenic, especially due to the carcinogenic and toxicological effects in the aquatic environment. The toxic trace of the Co(II) detection was conducted using the infrared photodiode electrode (IPDE) using a working electrode, via the cyclic and square-wave anodic stripping voltammetry. The results indicated a sensitive oxidation peak current of Co(II) on the IPDE. Under the optimal conditions, the common-type glassy carbon, the metal platinum, the carbon paste, and the carbon fiber microelectrode were compared with the IPDE in the electrolyte using the standard Co(II). The IPDE was found to be far superior to the others.