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http://dx.doi.org/10.13067/JKIECS.201.9.5.555

A Study on the Characteristics Analysis and Design of High Sensitivity Silicon Photodiode for Laser Detector  

Lee, Jun-Myung (원광대학교 정보통신공학과)
Kang, Eun-Young (원광대학교 정보통신공학과)
Park, Keon-Jun (원광대학교 정보통신공학과)
Kim, Yong-Kab (원광대학교 정보통신공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.9, no.5, 2014 , pp. 555-560 More about this Journal
Abstract
In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.
Keywords
Photodiode; Photodetector; Silicon(Si); Spectral Responsivity;
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Times Cited By KSCI : 2  (Citation Analysis)
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