1 |
P. S. Menon, S. K. Tasirin, I. Ahmad, and S. F. Abdullah, "Optimization of Process Parameters for Si Lateral PIN Photodiode," J. of World Applied Sciences, vol. 8, no. 1, 2013, pp. 98-103.
|
2 |
S. M. Sze, Physics of Semiconductor Devices. New Jersey : Wiley, 2007.
|
3 |
B.-J. Lee, "Polymer thin film organic transistor characteristics with plasma treatment of interlayers," J. of The Korea Institute of Electronic Communication Sciences, vol. 8, no. 6, 2013, pp. 797-804.
DOI
|
4 |
B.-J. Lee and H.-Y. Shin, "Water Vapor Permeability of SiO2 Oxidative Thin Film by CVD," J. of The Korea Institute of Electronic Communication Sciences, vol. 5, no. 1, 2010, pp. 81-87.
|
5 |
C. Z. Zhou and W. K. Warburton, "Noise analysis of low noise, high count rate, PIN diode X-ray detectors," IEEE Trans. Nuclear Science, vol. 43, no. 3, June 1996, pp. 1385-1390.
DOI
ScienceOn
|
6 |
C. R. Tull, J. S. Iwanczyk, B. E. Patt, G. Vilkelis, V. Eremin, E. Verbitskaya, N. Strokan, I. I1'yashenko, A. Ivanov, A. Sidorov, N. Egorov, S. Golubkov, and K. Kon'kov, "New High Sensitivity Silicon Photodetectors for Medical Imaging Application," IEEE Trans. Nuclear Science, vol. 50, no. 4, Aug. 2003, pp. 1225-1228.
DOI
ScienceOn
|
7 |
G. F. D. Betta, G. U. Pignatel, G. Verzellesi, and M. Boscardin, "Si-PIN X-ray detector technology," Nuclear Instruments and Methods in Physics Research, vol. 395, no. 3, Aug. 1997, pp. 344-348.
DOI
ScienceOn
|
8 |
E.-S. Kim, "Small Particle Detection System by Optical Scattering Effect," J. of The Korea Institute of Electronic Communication Sciences, vol. 7, no. 3, 2012, pp. 579-583.
과학기술학회마을
|