• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.163-167
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• 2022

In this study, we investigated a carbon nanotube (CNT) film sensor to detect hazardous and noxious substances distributed in seawater. The response change of the sensor was studied according to environmental temperature, and its temperature coefficient of resistance (TCR, α) was measured. The temperature of the CNT film (~50 ㎛) was in the range of 20-50 ℃, and αCNT was calculated to be -0.0011 %/ ℃. We experimentally confirmed that the CNT film had a smaller TCR value than that of the conventional sensor. Therefore, we investigated the response change of the CNT sensor according to temperature. The CNT sensor showed a relatively small error of approximately 2.3 % up to 30 ℃, which is within the temperature range of the seawater of the Korean Peninsula. However, when the temperature exceeded 40 ℃, the error in the CNT sensor increased by more than 5.2 %. We fabricated a metal oxide (ITO, indium-tin-oxide) film and compared its performance with that of the CNT sensor. The ITO sensor showed an error of >12.5 % at 30 ℃, indicating that in terms of the stability of the sensor to temperature, the CNT film sensor has superior performance.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.148-154
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• 2020

Highly ordered mesoporous manganese oxide films were electrodeposited onto indium tin oxide coated (ITO) glass using sodium dodecyl sulfate (SDS) and ethylene glycol (EG) which were used as a templating agent and stabilizer for the formation of micelle, respectively. The manganese oxide films synthesized with surfactant templating exhibited a highly mesoporous structure with a long-range order, which was confirmed by SAXRD and TEM analysis. The unique porous structure offers a more favorable diffusion pathway for electrolyte transportation and excellent ionic conductivity. Among the synthesized samples, Mn₂O₃-SDS+EG exhibited the best electrochemical performance for a supercapacitor in the wide range of scan rate, which was attributed to the well-developed mesoporous structure. The Mn₂O₃ prepared with SDS and EG displayed an outstanding capacitance of 72.04 F g^-1, which outperform non-porous Mn₂O₃ (32.13 F g^-1) at a scan rate of 10 mV s^-1.

• Journal of Powder Materials
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• v.25 no.1
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• pp.7-11
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• 2018

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.356-360
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• 2017

Indium tin oxide (ITO) provides high electrical conductivity and transparency at visible and near-IR wavelengths. ITO is widely used as a transparent electrode for the fabrication of LCDs, OLEDs, and many kinds of optical applications. It is widely employed for electrodes in various electric and display sectors because of its transparency in the visible range and high conductivity. Therefore, one issue is removing a specific area of a layer of material such as ITO or metallic film on a substrate, without affecting the properties of the substrate. ITO-on-glass removal using a laser is friendlier to the environment than traditional methods. In this study, ablation of ITO film on glass using a femtosecond-laser micromachining system (wavelength 1026 nm, pulse duration 150 fs) and a nanosecond-laser micromachining system (wavelength 1027 nm, pulse duration 5 ns) are described, compared, and analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.185-185
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• 2013

최근 의료 영상 센서는 급속도로 발전을 이룩하여 미세 병변의 위치와 그 크기를 진단하는 데에 많은 이용이 되고 있다. 하지만 기존 flat panel형태의 의료영상 센서는 인체의 굴곡으로 인한 영상 왜곡으로 발전의 한계에 이르고 있는 실정이다. 이 영상 왜곡으로 인한 오진은 환자에게 불필요한 피폭, 수술적 요법, 약물치료 등 환자에게 치명적인 의료사고를 일으킬 수 있다. 이러한 한계를 극복하기 위하여 flexible substrate을 이용한 투명전극들이 의료영상 센서로서의 적용을 연구 되어 졌다. IZO, ITO, FTO 등의 투명전극들 중 Indium Tin Oxide(ITO)는 다른 전극에 비해 높은 투명도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용 되고 있다. 그러나 ITO를 flexible substrate로 적용 시 불충분한 resistivity와 기계적 강도를 지니고 있으며, 유연성을 위해 전극 재료의 두께를 감소시키면 전도성의 문제를 일으키는 단점이 있는 것으로 알려져 있다. 이러한 문제점을 보완 및 해결하기 위하여 본 연구에서는 sputtering magnetron system를 이용하여 polyethylene terephthalate(PET) substrate 위에 ITO을 증착함으로써 전기적 특성을 알아보았다. PET 필름의 크기를 55 절단하였고 증착 온도는 고온에서 수축하는 PET 필름의 물성을 고려하여 $23^{\circ}C$로 설정 하였다. 가스의 분압 비를 Ar는 50ccm으로 고정하고 O2의 비율을 각각 0, 0.2, 0.4, 0.8, 1ccm으로 나눈 후, 비율에 따라 각각 30, 60, 90sec간 sputtering 증착을 하였다. 또한 각각 30, 60, 90sec간 sputtering 증착하여 O2 유량과 sputtering 증착 시간의 변화에 따른 ITO의 전도특성과 유연성에 대한 전도특성을 측정하였다. 유연성을 측정하기 위해선 bending 각도를 각각 $0^{\circ}$ $30^{\circ}$, $45^{\circ}$, $60^{\circ}$로 구부린 후, Two-point probe를 이용하여 변화된 저항을 통해 ITO의 전기적 성질의 변화를 측정 하였다. 측정결과 flexible ITO substrate의 전도특성은 sputtering 증착시간이 증가할수록 저항 값이 낮아지는 것을 확인하였지만, O2 유량이 증가 시 저항이 낮아지다가 다시 증가하는 결과를 알 수 있었다. 본 연구에서는 Ar:O2의 50:0.8의 조건에서 90sec동안 sputtering 증착한 ITO가 131 ${\Omega}/cm^2$의 저항 값이 측정 되었고 다른 조건에서는 164 ${\Omega}/cm^2$에서 4.7 $k{\Omega}/cm^2$까지 저항변화를 가져 Ar:O2의 50:0.8의 조건이 최적화에 좋은 조건이라 판단하였다. 또한 50:0.8의 조건의 ITO의 경우 bending test시에서도 131 ${\Omega}/cm^2$에서 316 ${\Omega}/cm^2$ 정도의 안정적인 저항변화를 가지는 반면 다른 조건에서는 128 ${\Omega}/cm^2$에서 6.63 $k{\Omega}/cm^2$까지의 변화를 나타나 기계적 형상변화에도 분압비가 영향을 주는 것을 확인 할 수 가 있었다. bending 각도에 따른 저항의 변화를 측정하였을 시, 각도 변화에 따라 중심부의 저항 값이 $60^{\circ}$에서 가장 높은 변화가 나타나 전기저항이 높아진 원인을 찾기 위해 Scanning Electron Microscope (SEM)촬영을 한 결과 저항값이 높아짐에 따라 ITO의 압축응력이 작용하는 부근에 Crack이 발생함을 알 수 있었다. 이러한 결과로 flexible ITO substrate의 Crack발생률을 최소화 시키고 bending시 전도성을 유지하기 위해서는 가스의 유량 최적화가 flexible substrate의 기계적형상변화에 대한 ITO의 내구성을 향상시킬 수 있는 해답이 될 것으로 사료된다.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.163-167
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• 2002

Improved optical switching property of electrochromic nickel hydroxide/nickel glass thin film is reported. Nickel metal film was deposited on glass by e-beam evaporation before following electrochemical redox cycling to form nickel hydroxide for electrochromic activation. Without ITO (indium tin oxide) layer as electrical conductor, this electrode showed more rapid coloration rate than nickel hydroxide film on ITO substrate in the change of the electric voltage and optical transmittance. XPS analysis confirmed the existence of ultra-thin nickel metal layer (${\sim}10{\AA}$) between electrochemically grown nickel hydroxide and the glass substrate. It is concluded that the remained nickel metal nano-layer attribute to the conduction layer and the enhanced response time.