• Title/Summary/Keyword: InP/ZnSe/ZnS

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Influence of MBE Growth Temperature on the Sulfur Compositional Variation Of ZnSSe Epitaxial Layers on GaAs Substrates

  • Kim, Dong-Lyeul;Bae, In-Ho;Son, Jeong-Sik;Kim, In-Su;Lee, Jae-Young m;Akira Yoshida
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.3
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    • pp.18-22
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    • 2000
  • In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

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The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots (온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화)

  • Son, Min Ji;Jung, Hyunsung;Lee, Younki;Koo, Eunhae;Bang, Jiwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.443-449
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    • 2018
  • We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

Highly Luminescent Multi-shell Structured InP Quantum Dot for White LEDs Application

  • Kim, Gyeong-Nam;Jeong, So-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.531-531
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    • 2012
  • So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

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Electrical and Optical Characteristics of QD-LEDs Using InP/ZnSe/ZnS Quantum Dot (InP/ZnSe/ZnS 양자점을 이용한 QD-LED의 전기 및 광학적 특성)

  • Choi, Jae-Geon;Moon, Dae-Gyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.151-155
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    • 2014
  • We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

Luminescence Properties of Cd-Free InZnP/ZnSe/ZnS Core/Shell Quantum Dots (비카드뮴계 InZnP/ZnSe/ZnS 코어쉘 양자점의 발광 특성)

  • Lee, Young-Ki;Lee, Min-Sang;Lee, Jeong-Mi;Won, Dae-Hee;Kim, Jong-Man
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.6
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    • pp.454-460
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    • 2021
  • In this work, we synthesized alloy-core InZnP quantum dots, which are more efficient than single-core InP quantum dots, using a solution process method. The effect of synthesis conditions of alloy core on optical properties was investigated. We also investigated the conditions that make up the gradient shell to minimize defects caused by lattice mismatch between the InZnP core and ZnS is 7.7%. The stable synthesis temperature of the InZnP alloy core was 200℃. Quantum dots consisting of three layered ZnSe gradient shell and single layered ZnS exhibited the best optical property. The properties of quantum dots synthesized in 100 ml and in 2,000 ml flasks were almost equal.

InP/ZnSe/ZnS: A Novel Multishell System for InP Quantum Dots for Improved Luminescence Efficiency and Its application in a Light-Emitting Device

  • Ippen, Christian;Greco, Tonino;Wedel, Armin
    • Journal of Information Display
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    • v.13 no.2
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    • pp.91-95
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    • 2012
  • Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED

  • Kwon, Byoung-Wook;Son, Dong-Ick;Lee, Bum-Hee;Park, Dong-Hee;Lim, Ki-Pil;Woo, Kyoung-Ja;Choi, Heon-Jin;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.451-451
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    • 2012
  • Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

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Effects of Synthesis Conditions on Luminescence Characteristics of Glutathione Capped ZnSe Nano particles (글루타티온이 캡핑된 ZnSe 나노 입자 발광 특성에 미치는 합성 조건의 영향)

  • Back, Geum Ji;Song, Ha Yeon;Lee, Min Seo;Hong, Hyun Seon
    • Journal of Powder Materials
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    • v.28 no.1
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    • pp.44-50
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    • 2021
  • Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과)

  • Hong, Myung-Seuk;Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.437-446
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    • 2008
  • Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

A Study on Serum Concentrations of Antioxidant Minerals in Normal Korean Adults (한국 정상성인의 항산화 관련 혈청 무기질 농도에 관한 연구)

  • 이양자
    • Journal of Nutrition and Health
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    • v.31 no.3
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    • pp.324-332
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    • 1998
  • Studies on relationships between antioxidant nutrients and various chronic diseases are increasing. In this study , serum concentrations of antioxidant minerals(Se, Cu, Zn & Mn) wee measured and compared among normal Korean adults. The ICP -MS method was employed to measure mineral concentrations. The subjects consisted of 329 healthy adults(154 men & 175 women) aged 20-79 years. The mean serum concentration appeared to be 26.4$\pm$0.41 (Se), 89.6$\pm$1.53(Cu), 113.3$\pm$1.56(Zn) & 0.34$\pm$0.05(Mn)$\mu\textrm{g}$/㎗ for men and 24.5$\pm$0.32(Se), 95.1$\pm$1.58(Cu), 133.6$\pm$1.79(Zn) & 0.35$\pm$0.02(Mn) $\mu\textrm{g}$/㎗ for women respectively. Among antioxidant minerals measured, the mean serum levels of Se and Zn were higher in men than in women(p<0.001), whereas that of Cu was higher in women(p<0.01). No significant difference between sex was observed for the mean Mn concentrations. The mean serum levels of Se(p<0.01) and Zn(p<0.05) decreased significantly in the 60's women On the other hand, the Mn concentrations in the 60's of women showed a significant increase(p<0.01). This difference seems to be due to the changes in menopausal status . The Cu levels in men showed a consistent increase with advancing age. The mean Cu/Zn ratios were 0.83 $\pm$0.04 for men and 0.95$\pm$0.02(p<0.01) for women respectively. The fact that this ratio increased significantly at the 60's of men (1.26 ; p<0.001) requires further study in relation to chronic diseases. When analyzed by stepwise multiple regression, drinking positively influenced serum Se and Cu levels for both men and women , smoking, however, negatively influenced all serum mineral levels for women. Further studies are needed to clarify precise roles of antioxidant minerals, their interactions and their relation to disease status.

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