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http://dx.doi.org/10.4313/JKEM.2014.27.3.151

Electrical and Optical Characteristics of QD-LEDs Using InP/ZnSe/ZnS Quantum Dot  

Choi, Jae-Geon (Department of Materials Engineering, Soonchunhyang University)
Moon, Dae-Gyu (Department of Materials Engineering, Soonchunhyang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.3, 2014 , pp. 151-155 More about this Journal
Abstract
We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.
Keywords
Quantum dot; QD-LED; InP/ZnSe/ZnS; Poly-TPD; 3TPYMB;
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