Browse > Article
http://dx.doi.org/10.5369/JSST.2008.17.6.437

Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy  

Hong, Myung-Seuk (Department of Mechenical Engineering, Chosun University)
Hong, Kwang-Joon (Department of Physics, Chosun University)
Publication Information
Journal of Sensor Science and Technology / v.17, no.6, 2008 , pp. 437-446 More about this Journal
Abstract
Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.
Keywords
point defect; hot wall epitaxy; single crystalline thick film; thermal annealing; photoluminescence;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 P. Korczak and C. B. Staff, "Heterojunction formation in (Cd,Zn)S/$ZnIn_2Se_4$ ternary solar cells", J. Crystal Growth, 24/25, pp. 386-391, 1974   DOI   ScienceOn
2 H. Fujita, "Electron radition damage in cadiumselenide crystal at liquid-helium temperrature", J. Phys. Soc., vol. 20, pp. 109-114, 1965   DOI
3 Y. P. Varshni, "Far-infrared optical absorption of $Fe^{2+}$ in ZnSe", Physica., vol. 34, pp. 149-154, 1967   DOI   ScienceOn
4 J. L. Shay, B. Tell, L. M. Schiavone, H. M. Kasper and F. Thiel, "Photoluminescience and phconductivity measurements on $ZnIn_2Se_4$", Phys. Rev., vol. 9, no. 4, pp. 1719-1723, 1974   DOI
5 홍광준, 이관교, "Hot Wall Epitaxy(HWE)법에 의한 AgGaSe2 단결정 박막 성장과 가전자대 갈라짐에 대한 연구", 센서학회지, 제15권, 제6호, pp. 397-405, 2006   과학기술학회마을   DOI
6 A. Elifer, J. D.Hecht, G. Lippold, and V. KramerL., "Combined infrared and ramman study of the optical phonons of defect chalcopyrite single crystal", Physica, B 263/264 , pp. 806-808, 1999   DOI   ScienceOn
7 T. A. Hendia and L .I. Soliman, "Optical absorption behavior of evaporated $ZnIn_2Se_4$ thin films", Thin Solid Films, vol. 261, pp. 322-327, 1955   DOI   ScienceOn
8 S. P. Yadav, P. S. Shinde, K . Y. Rajpure and C. H. Bhosale, "Photoelectrochemical properties of spray deposited n-$ZnIn_2Se_4$ thin film", Solar Energy Materials & Solar Cells, vol. 92, pp. 453-456, 2008   DOI   ScienceOn
9 G. Jimmie, Edwards, Pannee Buckel and P.Jan Norwisz, "Effusion reactions in the ZnSe-$ZnIn_2Se_4$," Thermochimica Acta 340/341, pp. 323-339, 1999   DOI   ScienceOn
10 S. P. Yadav, P. S. Shinde, K . Y. Rajpure and C. H. Bhosale, "Preparation and properties of spray deposited $ZnIn_2Se_4$ nanocrystalline thin films," J. Phys. and Chem. of thin Solids, vol. 631, pp. 1667-1671, 2005
11 B. D. Cullity, "Elements of X-ray diffractions," Caddson-Wesley, chap.11, (1985)
12 H.P. Trah, V. Kramer, "Analysis of the electrical and luminescent properties of $ZnIn_2S_4$", Zeitschr. Kristallogr., vol. 173, pp.199-204, 1985   DOI
13 K. J. Hong, T. S. Jeong and S. H. You, "Structural and optical of $CuGaSe_2$ layers grown by hot wall epitaxy", J. crystal Growth, vol. 310, pp. 2717-2723, 2008   DOI   ScienceOn
14 J. J. Hopfield and D. G. THomas, "The band structure of $ZnIn_2Se_4$ calculated by the pseudopotential method", Phys. Rev., vol. 132, pp. 563-569, 1963   DOI
15 B. Tell, J. L. Shay and H. M. Kasper, "The optical properties of $ZnIn_2Se_4$ crystal grown by the sublimation method", Phys. Rev., B4, pp. 2465-2469, 1971
16 Segall, B. and Marple, D. T. F., in : M. Aven and J. S. Prenerin (Eds), Physics and Chemistry of - Compounds, North-Holland, Amsterdam, pp. 340-349, 1967
17 A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud and E. I. terukov, "Radiative recombination in $ZnIn_2Se_4$", Semiconductors 37, pp. 432-437, 2003
18 D. D. Sell, S. E. Stokowski, R. Dingle and J. V. Dilorenzo, "Optical absorption of Co-doped $ZnIn_2Se_4$", Phys. Rev. B7, pp. 4568-4571, 1973
19 홍광준, "Hot wall epitaxy(HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구", 센서학회지, 제16권, 제6호, pp. 419-427, 2007   과학기술학회마을   DOI
20 J. Filipowicz, N. Romeo, and L. Tarricone, "Influence of irradiation on the optical and electrical properties of $ZnIn_2Se_4$ films", Radiat. Phys. Chem., vol. 50, no. 2, pp.175-177, 1999   DOI   ScienceOn