한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)

한국진공학회 (The Korean Vacuum Society)
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InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED

  • Kwon, Byoung-Wook (Future Convergence Research Division, Korea Institute of Science and Technology) ;
  • Son, Dong-Ick (Future Convergence Research Division, Korea Institute of Science and Technology) ;
  • Lee, Bum-Hee (Future Convergence Research Division, Korea Institute of Science and Technology) ;
  • Park, Dong-Hee (Future Convergence Research Division, Korea Institute of Science and Technology) ;
  • Lim, Ki-Pil (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Woo, Kyoung-Ja (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Choi, Heon-Jin (Department of Materials Science and Engineering Yonsei University) ;
  • Choi, Won-Kook (Future Convergence Research Division, Korea Institute of Science and Technology)
  • 발행 : 2012.02.08
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초록

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

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