• Korean Journal of Materials Research
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• v.29 no.3
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• pp.155-159
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• 2019

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with $H_2SO_4:H_2O_2:H_2O=1:5:5$. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.330-339
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• 2008

Ground-based interceptors(GBI) comprise a major element of the strategic defense against hostile targets like Intercontinental Ballistic Missiles(ICBM) and reentry vehicles(RV) dispersed from them. An optimum design of the subsystems is required to increase the performance and reliability of these GBI. Propulsion subsystem design and optimization is the motivation for this effort. This paper describes an effort in which an entire GBI missile system, including a multi-stage solid rocket booster, is considered simultaneously in a Genetic Algorithm(GA) performance optimization process. Single goal, constrained optimization is performed. For specified payload and miss distance, time of flight, the most important component in the optimization process is the booster, for its takeoff weight, time of flight, or a combination of the two. The GBI is assumed to be a multistage missile that uses target location data provided by two ground based RF radar sensors and two low earth orbit(LEO) IR sensors. 3Dimensional model is developed for a multistage target with a boost phase acceleration profile that depends on total mass, propellant mass and the specific impulse in the gravity field. The monostatic radar cross section (RCS) data of a three stage ICBM is used. For preliminary design, GBI is assumed to have a fixed initial position from the target launch point and zero launch delay. GBI carries the Kill Vehicle(KV) to an optimal position in space to allow it to complete the intercept. The objective is to design and optimize the propulsion system for the GBI that will fulfill mission requirements and objectives. The KV weight and volume requirements are specified in the problem definition before the optimization is computed. We have considered only continuous design variables, while considering discrete variables as input. Though the number of stages should also be one of the design variables, however, in this paper it is fixed as three. The elite solution from GA is passed on to(Sequential Quadratic Programming) SQP as near optimal guess. The SQP then performs local convergence to identify the minimum mass of the GBI. The performance of the three staged GBI is validated using a ballistic missile intercept scenario modeled in Matlab/SIMULINK.

• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.285-289
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• 2023

Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR) photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are based on InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition, current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damage to the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more to be safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compound semiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of being simple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, and a SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HT and ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDs had excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximum current change of about 1.6 times.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of Biosystems Engineering
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• v.27 no.3
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• pp.241-248
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• 2002

An electronic noses system including six metal oxide sensors was used to predict the characteristics of shelf-life of soybean curd. Soybean curd was stored at two different temperatures defined as low temperature(5$\^{C}$) and high temperature(25$\^{C}$). Resistance changes of the sensors were measured 13 times for 19 days at low temperature and 19 times for 120 hours at high temperature. Three different analytical methods such as graphical analysis(GA), principal component analysis(PCA), and cluster analysis(CA) were used to analyze sensors outputs. The ratio of resistance was decreased according to increasement of shelf-life. Using PCA it was possible to predict freshness and shelf-life time of soybean curds. Also, using CA it was possible to simplify an electronic nose system. Electronic nose system could be an efficient method to predict shelf-life and to evaluate quality in foods.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of Navigation and Port Research
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• v.26 no.2
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• pp.235-243
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• 2002

Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.274-278
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• 2012

$TiO_2$ can be used optically and is applied on many areas such as gas sensor, solar cell and photocatalysis. Electrospun nanofibers have received great interest for development and utilization in some novel applications, such as chemical sensors, dye-sensitized solar cell and photo catalysis. In this study, pure $TiO_2$ and Ga-doped $TiO_2$ nanofibers synthesized by a modified electrospinning method. The Ga doped $TiO_2$ solution is prepared by mixing poly vinyl pyrrolidone, ethyl alcohol, and titanium (IV) isopropoxide. By electrospinning these sols, nanofibers were fabricated. These fibers are heat-treated at $800^{\circ}C$ in air. The prepared pure $TiO_2$ and Ga-doped $TiO_2$ nanofibers samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy.

• Journal of Astronomy and Space Sciences
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• v.41 no.2
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• pp.121-138
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• 2024

Advances in solar-terrestrial physics are generally linked to the development of innovative new sensor technologies, affording us ever better sensitivity, higher resolution, and broader spectral response. Recent advances in low-noise InGaAs sensor technology have enabled the realization of low-light-level scientific imaging within the short-wave infrared (SWIR) region of the electromagnetic spectrum. This paper describes a new and highly sensitive ultra-wide angle imager that offers an expansion of auroral and airglow imaging capabilities into the SWIR spectral range of 900-1,700 nm. The imager has already proven successful in large-area remote sensing of mesospheric temperatures and in providing intensity maps showing the propagation and dissipation of atmospheric gravity waves and ripples. The addition of an automated filter wheel expands the range of applications of an already versatile SWIR detector. Several potential applications are proposed herein, with an emphasis on auroral science. The combined data from this type of instrument and other existing instrumentation holds a strong potential to further enhance our understanding of the geospace environment.