Fabrication and Time-Dependent Analysis of Micro-Hole in GaAs(100) Single Crystal Wafer Using Wet Chemical Etching Method |
Lee, Ha Young
(Department of Electronic Materials Engineering, Korea Maritime and Ocean University)
Kwak, Min Sub (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) Lim, Kyung-Won (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) Ahn, Hyung Soo (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) Yi, Sam Nyung (Department of Electronic Materials Engineering, Korea Maritime and Ocean University) |
1 | E. Menard, M. A. Meitl, Y. Sun, J. Park, D. J. Shir, Y. Nam, S. Jeon and J. A. Rogers, Chem. Rev., 107, 1117 (2007). DOI |
2 | D. L. Wilson, R. Martin, S. Hong, M. C. Golomb, C. A. Mirkin and D. L. Kaplan, PNAS, 98, 13660 (2001). DOI |
3 | D. Choi, H. K. Yu, S. G. Jang and S. Yang, J. Am. Chem. Soc., 126, 7019 (2004). DOI |
4 | O. Fenwick, L. Bozec, D. Credgington, A. Hammiche, G. M. Lazzerini, Y. R. Silberg and F. Cacialli, Nat. Nanotechnol., 4, 664 (2009). DOI |
5 | F. Withers, T. H. Bointon, M. Dubois, S. Russo and M. F. Craciun, Nano Lett., 11, 3912 (2011). DOI |
6 | Y. Lu and S. C. Chen, Nanotechnology, 14, 505 (2003). DOI |
7 | Y. Bahk, B. J. Kang, Y. S. Kim, J. Kim, W. T. Kim, T. Y. Kim, T. Kang, J. Rhie, S. Han, C. -H. Park, F. Rotermund and D. -S. Kim, Phys. Rev. Lett., 115, 125501 (2015). DOI |
8 | M. Najiminaini, F. Vasefi, B. Kaminska and J. J. L. Carson, Appl. Phys. Lett., 100, 043105 (2012). DOI |
9 | C. Genet and T. W. Ebbesen, Nature, 445, 39 (2007). DOI |
10 | A. Lesuffleur, H. Im, N. C. Lindquist and S. Oh, Appl. Phys. Lett., 90, 243110 (2007). DOI |
11 | J. Parsons, E. Hendry, C. P. Burrows, B. Auquie, J. R. Sambles and W. L. Barnes, Phys. Rev. B, 79, 073412 (2009). DOI |
12 | T. Sannomiya, O. Scholder, K. Jefimovs, C. Hafner and A. B. Dahlin, Small, 7, 1653 (2011). DOI |
13 | K. Nakayama, K. Tanabe and H. A. Atwater, Appl. Phys. Lett., 93, 121904 (2008). DOI |
14 | S. Iida, T. Sugimoto, S. Suzuki, S. Kishimoto and Y. Yagi, J. Cryst. Growth, 72, 51 (1985). DOI |
15 | K. Gamo, Y. Ochiai and S. Namba, Jpn. J. Appl. Phys., 21, L792 (1982). DOI |
16 | K. P. Hilton and J. Woodward, Electron. Lett., 21, 962 (1985). DOI |
17 | R. J. Young, J. R. A. Cleaver and H. Ahmed, J. Vac. Sci. Technol. B, 11, 234 (1993). DOI |
18 | Y. Sugimoto, M. Taneya, H. Hidaka and K. Akita, J. Appl. Phys., 68, 2392 (1990). DOI |
19 | E. Miyauchi, H. Arimoto, H. Hashimoto and T. Utsumi, J. Vac. Sci. Technol., B, 1, 1113 (1983). DOI |
20 | R. Cheung, S. Thoms, S. P. Beamont, G. Doughty, V. Law and C. D. W. Wilkinson, Electron. Lett., 23, 857 (1987). DOI |
21 | J. L. Vossen and W. Kern, Thin film processes, p.403, J. L. Vossen, Academic press, London (1978). |
22 | J. S. Kim, Master Thesis (in Korean), p. 1-4, Korea Maritime and Ocean University, Busan (2004). |
23 | S. M. Sze, Physics of Semiconductor Devices, John Wiley, New York (2012). |
24 | Y. Ochiai, K. Gamo and S. Namba, J. Vac. Sci. Technol., B, 3, 67 (1985). |
25 | H. Y. Lee, Master Thesis (in Korean), p. 59-60, Korea Maritime and Ocean University, Busan (2018). |