• 한국광학회지
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• 제32권2호
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• pp.55-61
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• 2021

850 nm 대역의 발진 파장을 갖는 GaAs/AlGaAs 다중양자우물 레이저 다이오드의 lateral-mode 특성과 이 특성이 출력 광파워 kink에 미치는 영향을 조사하였다. 이를 위해 전기적-열적-광학적 시뮬레이션을 self-consistent하게 수행하고, 제작된 레이저 다이오드 소자들을 측정하였다. 연구 결과를 바탕으로 높은 출력 파워에서도 single lateral-mode를 유지해서 좋은 beam quality를 유지할 수 있는 최적의 P-cladding 두께를 결정하였다.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• 전자공학회논문지D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• ETRI Journal
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• 제26권5호
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.461-464
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• 1998

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.885-888
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• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.605-610
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• 2006

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.2-2
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• 2010

텐덤형 태양전지는 다양한 에너지 대역을 동시에 흡수할 수 있도록 제작할 수 있어 단일접합 태양전지에 비해 높은 에너지변환효율을 기대할 수 있다. 본 연구에서는 GaAs를 기반으로 양자점 혹은 양자우물 구조를 이용한 고효율 텐덤형 태양전지를 설계하고, 완충층 및 활성층의 특성을 분석하였다. 분자선 단결정 성장 장비를 이용하여 GaAs 기판 위에 메타모픽 (metamorphic)성장법을 이용하여 convex, linear, concave 형태로 조성을 변화시켜 $In_xAl_1-_xAs$ 경사형 완충층을 성장한 후 그 특성을 비교하였다. 또한, 최적화된 경사형 완충층 위에 1.1 eV와 1.3 eV의 에너지 대역을 각각 흡수할 수 있는 적층 (5, 10, 15 층)된 InAs 양자점 구조 또는 InGaAs 양자우물구조를 삽입하여 p-n 접합을 성장하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 GaAs층의 두께 (20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. 그 결과, 경사형 완충층을 통해 조성 변화로 인한 결함을 최소화하여 다양하게 조성 변화가 가능한 고품위의 구조를 선택적으로 성장할 수 있었으며, 적층의 양자점 구조 및 양자우물 구조를 이용해 고효율 텐덤형 태양전지의 구현 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.