Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Character istics of self-aligned AlGaAs/GaAs HBT using $WN_{x}$ as emitter metal

$WN_{x}$ 에미터 전극을 갖는 자기정렬 AlGaAs/GaAs HBT의 제작과 특성

  • 이종민 (한국전자통신연구원 반도체연구단) ;
  • 이태우 (한국전자통신연구원 반도체연구단) ;
  • 박문평 (한국전자통신연구원 반도체연구단) ;
  • 최인훈 (고려대학교 재룡공학과) ;
  • 박성호 (한국전자통신연구원 반도체연구단) ;
  • 박철순 (한국전자통신연구원 반도체연구단)
  • Published : 1998.06.01
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Abstract

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

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