Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Analysis of Lateral-mode Characteristics of 850-nm MQW GaAs/(Al,Ga)As Laser Diodes

850 nm GaAs/AlGaAs MQW LD의 Lateral-mode 특성 연구

  • 양정택 (연세대학교 전기전자공학과, 초고속 회로 및 시스템 연구실) ;
  • 곽정근 (큐에스아이) ;
  • 최안식 (큐에스아이) ;
  • 김태경 (큐에스아이) ;
  • 최우영 (연세대학교 전기전자공학과, 초고속 회로 및 시스템 연구실)
  • Received : 2021.01.05
  • Accepted : 2021.03.02
  • Published : 2021.04.25
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Abstract

The lateral-mode characteristics of 850-nm GaAs/(Al,Ga)As multiple-quantum-well laser diodes and their influence on the kinks in output optical power are investigated. For the investigation, self-consistent electro-thermal-optical simulation and measurement of fabricated devices are used. From this investigation, the optimal P-cladding thickness that provides single-lateral-mode operation is determined, so that high beam quality can be achieved even at high output powers.

850 nm 대역의 발진 파장을 갖는 GaAs/AlGaAs 다중양자우물 레이저 다이오드의 lateral-mode 특성과 이 특성이 출력 광파워 kink에 미치는 영향을 조사하였다. 이를 위해 전기적-열적-광학적 시뮬레이션을 self-consistent하게 수행하고, 제작된 레이저 다이오드 소자들을 측정하였다. 연구 결과를 바탕으로 높은 출력 파워에서도 single lateral-mode를 유지해서 좋은 beam quality를 유지할 수 있는 최적의 P-cladding 두께를 결정하였다.

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References

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