• Advances in nano research
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• v.3 no.1
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• pp.13-27
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• 2015

Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in $Ga_{0.9}In_{0.1}N$/GaN and $Al_{0.395}In_{0.605}N$/AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from $50{\AA}$ to $25{\AA}$ of $Ga_{0.9}In_{0.1}N$/GaN ($Al_{0.395}In_{0.605}N$/AlN) quantum dot.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.124-127
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• 2011

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.146-151
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• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.

• ETRI Journal
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• v.26 no.5
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.387-391
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• 2014

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.442-448
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• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.356-361
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• 2009

The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.194-200
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• 2006

Self-assembled InAs/InAl(Ga)As quantum dots (QDs) were grown on InP substrates by a molecular-beam epiaxy, and their structural and optical properties were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and room-temperature photoluminescence (PL). AFM images indicated that the InAs quantum structures showed various shapes such as quantum dashes, asymmetric and symmetric QDs mainly caused by the initial surface conditions of InAl(Ga)As with the intrinsic phase separation. For the buried InAs QDs in an InAlGaAs matrix, the average lateral size and height of QDs were 23 and 2 nm, respectively. By changing the growth conditions for the QD samples, the emission wavelength of $1.55{\mu}m$ was obtained, which is one of the wavelength windows for fiber optic communications.