Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Luminescence Properties of InAlAs/AlGaAs Quantum Dots Grown by Modified Molecular Beam Epitaxy

  • Kwon, Se Ra (Department of Physics, Kangwon National University) ;
  • Ryu, Mee-Yi (Department of Physics, Kangwon National University) ;
  • Song, Jin Dong (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology)
  • Received : 2014.11.25
  • Accepted : 2014.11.30
  • Published : 2014.11.30
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Abstract

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.

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