1 |
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Y. M. Shernyakov, B. V. Volovik, A. F. Tsatsul'nikov, P. S. Kop'ev, and Zh. I. Alferov, "Quantum dot lasers: breakthrough in optoelectronics," Thin Solid Films 367, 235-249 (2007).
|
2 |
M. Grundmann, J. Christen, N. N. Ledentsov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, "Ultra narrow luminescence lines from single quantum dots," Phys. Rev. Lett. 74, 4043-4046 (1995).
DOI
ScienceOn
|
3 |
A. R. Kovsh, J. S. Wang, R. S. Hsiao, L. P. Chen, D. A. Livshits, G. Lin, V. M. Ustinov, and J. Y. Chi, "High power (200 mW) single mode operation of GaAs based InGaAsN/GaAs ridge waveguide lasers with wavelength around 1300 nm," Electron. Lett. 39, 1726-1728 (2003).
DOI
ScienceOn
|
4 |
Z.-M. Li, "Physical models and numberical simulation of modern semiconductor lasers," Proc. SPIE 2994, 698-708 (1997).
DOI
|
5 |
M. B. Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Muller, M. Reufer, K. Streubel, J. W. Tomm, and G. Bacher, "Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes," Appl. Phys. Lett. 91, 041115-041115-3 (2007).
DOI
ScienceOn
|
6 |
M. Hempel, J. W. Tomm, M. Ziegler, T. Elsaesser, N. Michel, and M. Krakowski, "Catastrophic optical damage at front and rear facets of diode lasers," Appl. Phys. Lett. 97, 231101-231101-3 (2010).
DOI
ScienceOn
|
7 |
G. C. Wilson, D. M. Kuchta, J. D. Walker, and J. S. Smith, "Spatial hole burning and self-focusing in vertical-cavity surface-emitting laser diodes," Appl. Phys. Lett. 64, 542-544 (1994).
DOI
ScienceOn
|
8 |
S. Y. Law and G. P. Agrawal, "Effects of spatial hole burning on gain switching in vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron. 33, 462-468 (1997).
DOI
ScienceOn
|
9 |
H. J. Unold, M. Golling, F. Mederer, R. Michalzik, D. Supper, and K. J. Ebeling, "Single mode output power enhancement of InGaAs VCSELs by reduced spatial hole burning via surface etching," Electron. Lett. 37, 570-572 (2001).
DOI
ScienceOn
|
10 |
W. T. Tsang, "Extermely low threshold (AlGa)As gradedindex waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy," Appl. Phys. Lett. 40, 217-219 (1982).
DOI
|
11 |
J. Nagle, S. Hersee, M. Krakowski, T. Weil, and C. Weisbuch, "Threshold current of single quantum well lasers: the role of the confining layers," Appl. Phys. Lett. 49, 1325-1327 (1986).
DOI
|
12 |
J. A. Martin and M. Sanchez, "Comparison between a graded and setp-index optical cavity in InGaN MQW laser diodes," Semicond. Sci. Technol. 20, 290-295 (2005).
DOI
ScienceOn
|
13 |
R. Puchert, A. Barwolff, U. Menzel, A. Lau, M. Voss, and T. Elsaesser, "Facet and bulk heating of GaAs/AlGaAs high-power laser arrays studied in spatially resolved emission and micro-Raman experiments," J. Appl. Phys. 80, 5559-5563 (1996).
DOI
ScienceOn
|
14 |
S. H. Lee, H. W. Jung, K. H. Kim, and M. H. Lee, "All-optical flip-flop operation based on polarization bistability of conventional-type wavelength single-mode VCSELs," J. Opt. Soc. Korea 14, 137-141 (2010).
과학기술학회마을
DOI
ScienceOn
|
15 |
S. Kim, Y. T. Byun, D.-G. Kim, N. Dagli, and Y. Chung, "Widely tunable coupled-ring reflector laser diode consisting of square ring resonators," J. Opt. Soc. Korea 14, 38-41 (2010).
과학기술학회마을
DOI
ScienceOn
|