• Advances in nano research
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• v.2 no.4
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.371-372
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.169-173
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• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.388-393
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• 2020

In this study, a PbS quantum dots (QDs)-based H₂ gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH₂ present in the ligand of PbS QDs and H₂ gas are combined to form NH₃⁺, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H₂ gas, the resistance change owing to the reaction between the NH₂ of PbS QDs and H₂ gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H₂ gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H₂ gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C₂H₂, CO₂, and CH₄.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.189-189
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• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.160-167
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• 2010

In this paper, we fabricated the optoelectronic device based on Cadmium selenide(CdSe) nanocrystal quantum dots (NQDs)/single-walled carbon nanotubes(SWNTs) heterostructure using dieletrophoretic force. The efficient charge transfer phenomena from CdSe to SWNT make CdSe-Pyridine(py)-SWNT unique heterostructures for novel optoelectronic device. The conductivity of CdSe-py-SWNT was increased when it was exposed at ultra violet(UV) lamp, and varied as a function of wavelength of incident light.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• Analytical Science and Technology
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• v.36 no.4
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• pp.161-169
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• 2023

In this study, a straightforward and precise nitrogen/sulphur-codoped carbon dots (N/S-CD) was produced using a microwave irradiation approach. The N/S-CD was formulated from succinic acid (SA), bis-(3-aminopropyl)-amine (BAPA), and sodium thiosulphate (STS) as sources of carbon, nitrogen, and sulphur, respectively. The synthesized N/S-CD established a valuable quantum yield (QY) of 70 % and was sensitive to aluminium ion (Al³⁺) with a detection limit of 0.21 µM and a linear concentration range of 0-100 µM. When detecting Al³⁺ in real water samples, the N/S-CD resulted in a satisfactory recovery in the range of 91.14 %-103.37 %. Thus, the proposed study is very promising for Al³⁺ detection in environmental water samples.