• 한국결정성장학회지
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• 제16권6호
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• pp.256-259
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• 2006

Vapor phase epitaxy(VPE)법을 사용하여 amorphous $SiO_x$. nanowires를 성장시켰다. Ni thin film을 촉매로 사용하여 Si 기판위에 $800{\sim}1100^{\circ}C$ 범위의 온도에서 성장시켰으며, $SiO_x$ nanowires의 성장 메커니즘은 Vapor-liquid-solid(VLS)으로 확인되었다. $SiO_x$ nanowires의 shape와 morphology는 scanning electron microscope(SEM)으로 분석하였으며, cotton-like형태이고 길이는 $10{\mu}m$정도였다. 그리고 구조적 특징은 transmission electron microscope(TEM)으로 관찰하였고, $SiO_x$ nanowires의 성분 분석은 energy dispersed X-ray spectroscopy(EDS)로 하였다. EDX spectrum으로 nanowires가 Si와 O로 구성되어졌음을 확인하였다.

• 한국세라믹학회지
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• 제56권3호
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• pp.308-316
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• 2019

CdS_xSe_1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.11-17
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• 2020

In this study, a new method for fabricating flexible transparent electrodes based on silver nanowire-polymer (AgNW-PEDOT:PSS) composite materials having a mesh pattern formed by a solution-based process without lithography was proposed. By optimizing conditions such as the amount of ultraviolet (UV) photosensitizer injected into the suspension of AgNW and PEDOT:PSS, UV exposure time, and deionized (DI) washing time, a clear and uniform mesh pattern was obtained. For the fabricated AgNW-PEDOT:PSS-based mesh-type electrodes, characteristics such as electrical sheet resistance, light transmittance, haze, and bending flexibility were analyzed according to the mixing ratio of AgNW and PEDOT:PSS included in the suspension. The fabricated mesh electrodes typically exhibited a low electrical sheet resistance of less than 20 Ω/sq while maintaining a high transmittance of 80% or more. In addition, it was confirmed from the results of analyzing the effect of PEDOT:PSS on the characteristics of the mesh-type AgNW-PEDOT electrode that the optical visibility was greatly enhanced by reducing the surface roughness and haze, and the bending flexibility was remarkably improved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.130-130
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• 2016

Bioinspired hierarchical nanostructures for self-cleaning s-tnwjurface and SERS substrates are investigated. The multi-level hierarchy is combined with CuO nanowire and additional nanoscale structures. CuO nanowire, which has extremely high aspect ratio, serves as a base structure of multi-level hierarchy and additional flower like structures are placed on the CuO nanowires. Since as-fabricated CuO nanostructures are hydrophilic, the surface is coated with perfluorooctyltrichlorosilane in order to change its wetting property to hydrophobic. While those CuO based nanostructures have a sufficient roughness for superhydrophobic characteristics, hierarchical nanoflowers on nanowire structures lead to a self-cleaning surface. Furthermore, flower like nanostructures provide reentrant curvatures, thus enabling oleophobic property. The surfaces has a repellency even for a tiny droplet (10 nL) of low surface tension liquids (~35 mN/m). On the on hands, nanoflowers provide many number of nanoscale gaps. After a thin layer of silver is deposited on the surface of CuO nanostructures, those nanoscale gaps act as hot-spot for surface enhanced Raman scattering (SERS). To analyze SERS enhancement of the surfaces, Raman shift is measured with varying molar density of 4-Mercaptopyridine from mM to pM. From these results, hierarchical CuO nanostructures are suitable for self-maintenance and cost effective SERS sensing applications.

• Bulletin of the Korean Chemical Society
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• 제25권9호
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• pp.1341-1345
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• 2004

We developed a novel synthesis strategy of titania nanowire arrays by employing simple hydrothermal reaction and ion-exchange reaction techniques. Hydrothermal reactions of metallic titanium powder with $H_2O_2$ in a 10 M NaOH solution produced a new sodium titanate compound, $Na_2Ti_6O_{13}{\cdot}xH_2O$ (x~4.2), as arrays of nanowires of lengths up to 1 mm. Acid-treatment followed by calcination of this material produced arrays of highly crystalline anatase nanowires as evidenced by x-ray diffraction, Raman spectroscopy, and transmission electron microscopy studies. In both cases of sodium titanate and anatase, the nanowires have exceptionally large aspect ratios of 10,000 or higher, and they form arrays over a large area of $1.5 {\times} 3 cm^2$. Observations on the reaction products with varied conditions indicate that the array formation requires simultaneously controlled formation and crystal growth rates of the $Na_2Ti_6O_{13}{\cdot}xH_2O$ phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.407-407
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• 2014

Nanotechnology, especially vertically grown silicon nanowires, has gotten great attentions in biology due to characteristics of one dimensional nanostructure; controllable synthetic structure such as lengths, diameters, densities. Silicon nanowires are promising materials as nanoelectrodes due to their highly complementary metal-oxide-semiconductor (CMOS) - and bio-compatibility. Silicon nanowires are so intoxicated that are effective for bio molecular delivery and electrical stimulation. Vertical nanowires with integrated Au tips were fabricated for electrical intracellular interfacing with PC-12 cells. We have made synthesized two types of nanowire devices; one is multi-nanowires electrode for bio molecular sensing and electrical stimulation, and the other is single-nanowires electrode respectively. Here, we demonstrate that differentiation of Nerve Growth Factor (NGF) treated PC-12 cells can be promoted depending on different magnitudes of electrical stimulation and density of Si NWs. It was fabricated by both bottom-up and top-down approaches using low pressure chemical vapor deposition (LPCVD) with high vacuuming environment to electrically stimulate PC-12 cells. The effects of electrical stimulation with NGF on the morphological differentiation are observed by Scanning Electron Microscopy (SEM), and it induces neural outgrowth. Moreover, the cell cytosol can be dyed selectively depending on the degree of differentiation along with fluorescence microscopy measurement. Vertically grown silicon nanowires have further expected advantages in case of single nanowire fabrication, and will be able to expand its characteristics to diverse applications.

• 한국의류학회지
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• 제45권4호
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• pp.674-684
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• 2021

Recent advances in electronic technology have engendered a need for research on the use of smart materials in clothing. Electro-conductive fibers are expected to be a crucial element of wearable devices. Therefore, in this study, we have attempted to develop electro-conductive threads and cables using silver nanowires. Based on the characteristics of silver nanowire, in which electro-conductivity can be imparted via heat treatment, we prepared conductive threads by coating nylon yarn with silver nanowires and curing at temperatures of 140℃, 150℃, and 160℃. Conductive threads cured at 140℃ had the highest conductivity, followed by threads cured at 160℃ and 150℃ respectively. The order of the electrical conductivity of the threads after tensile testing was consistent with the original order of the conductivity of the threads. When we evaluated the sensing performance of electro-conductive cables fabricated from these threads, the cables manufactured from threads cured at 140℃ and 160℃ were found to function normally within temperature and humidity sensors. All the cables operated normally in illuminance and electrocardiogram sensors. Thus, we believe that threads made of silver nanowire have sufficient electrical conductivity to be utilized as wearable sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.261.1-261.1
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• 2013

Well-aligned nanowire arrays can be used as building blocks for nanoscale device. Recently, we reported that well-aligned single-crystal organic nanowires has been created by using a direct printing method which is named liquid-bridge mediated nanotransfer molding (LB-nTM). Moreover, multi-layering nanostructures can be fabricated by repeating this printing process. As a result, it is possible to make simple and basic concept of heterojunction devices such as crossed nanowire devices. We fabricated crossed single-crystal organic nanowires nanojunction devices from 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) single-crystal nanowires using by direct printing method in solution process. Crossed TIPSPEN/ C60 single-crystal nanowires diode has rectifying behavior with on/off ratios of ~13. In addition, the device shows photodiode characteristics as well as rectification. Our study represent methodology of heterojunction devices using single-crystal nanowires, thereby provide a new direction of future nanoelectronics.

• ETRI Journal
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• 제41권6호
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.198-201
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• 2005

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shells were etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.