• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.5 no.6
• /
• pp.1128-1135
• /
• 2001

In this paper, a new HSG-Si formation technology, "seeding method', which employs Si$_2$H$_{6}$-molecule irradiation and annealing, was applied for realizing 64Mbit DRAMs. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous-doped amorphous-Si electrode. The new HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors. In this technique, optimum process conditions of the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53$0^{\circ}C$ and 400$\AA$, respectively. In the 64M bit DRAM capacitor using optimum process conditions, limit thickness of dielectric nitride is about 65$\AA$.

• Journal of Korean Society of Environmental Engineers
• /
• v.28 no.5
• /
• pp.563-572
• /
• 2006

In order to propose optimum in-situ treatment for reducing phosphorous release from sediment of stationary lakes, a series of column tests were performed. The sediment used in experiment was very fine clay with a mean grain site $7.7{\phi}$ and high $C_{org}$ contents(2.4%). Phosphorous releases were evaluated in two ways : in lake water(with microbial effect) and in distilled water(without microbial effect). As in-situ capping material, sand and loess were used while Fe-Gypsum and $SiO_2$-Gypsum were used for in-situ chemical treatment. In case of lake water considering the effect of microorganism, phosphorous concentration rapidly decreased in the early stage of experiment but it was gradually increased after 10 days. Flux of phosphorous release for control was $3.0mg/m^2{\cdot}d$. Whereas, those for sand layer capping(5 cm) and loess layer capping(5 cm) were $2.5mg/m^2{\cdot}d\;and\;1.8mg/m^2{\cdot}d$, respectively because the latter two were not consolidated sufficiently. For Fe-gypsum and $SiO_2$-gypsum the fluxes were $1.4mg/m^2{\cdot}d$ which meant that reduction efficiency of phosphorous release was more than 40% higher than that of control. The case capping with complex layer was $1.0mg/m^2{\cdot}d$, which showed high reduction efficiency over 60%. The addition of gypsum($CaSO_4{\cdot}2H_2O$) into the sediment reduced release of Phosphorus from the sediments. Gypsum acted as a slow-releasing source of sulphate in sediment, which enhanced the activity of SRB(sulfate reducing bacteria) and improved the overall mineralization rate of organic matter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.2
• /
• pp.95-100
• /
• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Journal of the Korean Ceramic Society
• /
• v.31 no.1
• /
• pp.74-78
• /
• 1994

Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{\circ}C$/30 nm, and poly-Si, 6$25^{\circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.4 no.4
• /
• pp.809-815
• /
• 2000

The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.

• Asian-Australasian Journal of Animal Sciences
• /
• v.15 no.6
• /
• pp.793-799
• /
• 2002

Four feeds, three concentrates (rice bran, soybean meal and flaked corn) and one forage (corn silage) were incubated in four ruminally fistulated Holstein steers over three one week periods in a 3${\times}$4 incomplete latin square design where steers served as blocks and feeds as treatment. The objectives of the study were to investigate in situ DM, N and P degradability characteristics of feeds in order to assess availability of these nutrients by ruminants. In each period, all feeds were incubated in quadruplets (corn silage in triplicates) in the rumen of each steer in a reverse order for 3, 6, 9, 12, 18, 24 and 48 h. The DM 'a' fraction was higher and lower (p<0.001) in corn silage and rice bran respectively. Although corn silage contained the lowest (p<0.01) DM 'b' fraction, flaked corn contained the highest. Rate of DM degradation of flaked corn and corn silage were half (p<0.05) of the rate of DM degradation of either rice bran or soybean meal. Potential or effective DM degradability (p<0.05 to 0.001) at various passage rates were the lowest for rice bran and the highest for soybean meal. Corn silage N 'a' and 'b' was the highest and lowest, respectively (p<0.01). N 'c' of corn silage and rice bran was higher (p<0.001) than other feeds. Potential N degradability was the lowest in flaked corn (p<0.05). P 'a' was high (p<0.01) for corn silage and rice bran. P 'b' fraction was very high (p<0.001) in soybean meal but was absent in corn silage. Availability of DM (p<0.01 or 0.001), N (p<0.001) and P (p<0.05) differed between feeds at various passage rates except P availability at k=0.02 per h (p>0.05). The results demonstrate that the availability of DM, N and P by ruminants depends on feed as well as categories of animal.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.7
• /
• pp.2029-2035
• /
• 2013

The impact of phosphorous (P)-doping on the electrochemical performance and surface chemistry of soft carbon is investigated by means of galvanostatic cycling and ex situ X-ray photoelectron spectroscopy (XPS). P-doping plays an important role in storing more Li ions and discernibly improves reversible capacity. However, the discharge capacity retention of P-doped soft carbon electrodes deteriorated at $60^{\circ}C$ compared to non-doped soft carbon. This poor capacity retention could be improved by vinylene carbonate (VC) participating in forming a protective interfacial chemistry on soft carbon. In addition, the effect of P-doping on exothermic thermal reactions of lithiated soft carbon with electrolyte solution is discussed on the basis of differential scanning calorimetry (DSC) results.

• Korean Journal of Environmental Biology
• /
• v.36 no.4
• /
• pp.558-566
• /
• 2018

The objective of the study was to determine nutrition regime and limitation in the Boryeng Reservoir where there's a water tunnel between Geum River and the reservoir. Evaluation was conducted through in situ algal bioassay experiments (in situ ABEs) using the cubitainer setting in the reservoirs. For in situ ABEs, we compared and analyzed variations in chlorophyll-a (CHL-a) and phosphorus concentrations in Boryeong Reservoir before and after the water tunnel construction. We then analyzed the nutrient effects on the reservoir. Analysis for nitrogen and phosphorus was done in the three locations of the reservoir and two locations of the ABEs. The in situ ABEs results showed that phosphorous and Nitrogen, the primary limiting nutrient regulating the algal biomass was not limited in the system. The treatments of phosphorus or simultaneous treatments of N+P showed greater algal growth than in the control of nitrate-treatments, indicating a phosphorus deficiency on the phytoplankton growth in the system. The water from the Geum River had 5 times higher total phosphorus (TP) than the water in the reservoir. Efficient management is required as pumping of the river water from Geum River may accelerate the eutrophication of the reservoir.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2000.10a
• /
• pp.475-479
• /
• 2000

The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f${\mu}{\textrm}{m}$$^2$ for 128Mbit DRAM. An H5G-Si formation technology with seeding method, which employs Si$_2$H$_{6}$ molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled H5G-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.s.

• Journal of Sensor Science and Technology
• /
• v.26 no.6
• /
• pp.438-444
• /
• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.