Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2000.10a
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- Pages.475-479
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- 2000
A Study on Capacitance Enhancement by Hemispherical Grain Silicion and Phosphorous Concentration Properties
HSC-Si형성에 따른 캐패시턴스의 향상 및 인농도 특성에 관한 연구
Abstract
The box capacitor structure with H5G-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a 0.482f
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