• Title/Summary/Keyword: In-band 방식

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Tx-Leakage Signal Blocking System in RFID System (단일 안테나를 사용하는 RFID에서의 Phase Shifter를 이용한 TX Leakage 제거 방식)

  • Jeon, Bu-Won;Bae, Jae-Hyun;Roh, Hyoung-Hwan;Joung, Myoung-Sub;Park, Jun-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.862-865
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    • 2007
  • Rx and Tx signal use same band in RFID. Then RFID system is not used duplexer and used coupler. RFID system have problem about Rx part to Tx leakage signal because that Rx signal port is Tx signal port's Isolation port. We proposal using phase shifter Tx leakage signal decrease than other RFID system. It is same signal Tx signal port's coupling port and isolation port signal except amplitude and phase. So if make coupling signal and isolation signal is in all same signal. We cancel Tx leakage signal used coupling port. And verification about ADS2006.

A Study on the Implementation of a High Speed Synchronization Circuit Applied in Frequency Hopping FSK Tranceiver (주파수 도약 통신방식 FSK 송수신기의 고속동기회로 구현에 관한 연구)

  • 이준호;전동근;차균현
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.1
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    • pp.38-46
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    • 1992
  • In this thesis, a high speed code synchronization circuit is implemented, which is applicable to frequency hopping FSK tranceiver within 68-88 MIBz band- width. synchronization Process consists of two steps, initial synchronization and tracking. A modified matched filter method using two channel passive correlators matched with short hopping frequencies, synchronization prcfix. is proposed for initial synchronization. To increase probability of initial synchronization, prefix are transmitted repeatedly. The outputs of correlators are sent to synchronization decision circuit, and code start time Is extracted by synchronizatlon decision circuit-Modified matched fitter method makes it possible to reduce complexity in hardware and obtain code acquisition rapidly.Clock recovery circuit regenerates PN code clock for tracking.

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A Centralized Arbitration Scheme to Avoid Collisions of UHF Band RFID Readers (UHF 대역 RFID 리더들의 충돌을 제거하기 위한 중앙 중재 방법)

  • Bae, Sung-Woo;Ryu, Won-Sang;Ahn, Si-Young;Yang, Jung-Kyu;Kim, Yun-Ho;Kim, Jun-Hyung;Oh, Ha-Ryoung;Seong, Yeong-Rak;Park, Jun-Seok
    • Journal of the Korea Society for Simulation
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    • v.17 no.4
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    • pp.99-112
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    • 2008
  • In the passive UHF (860-960MHz) RFID communications, which consists of a set of readers and tags, the readers normally interrogate the tag by using the backscatter mechanism. (i.e., tag response). In practical RFID environment, where multiple readers or tags exist; the interference causes collisions. This paper proposes a centralized arbitration scheme for avoiding the collision problems among multiple readers. The proposed centralized arbitration scheme is modeled in software environments, and is verified with simulation results. Simulated performance is focused on completion time, utilization and response time, and the simulation results show that our proposed scheme provides satisfactory performance grade.

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A Method to Improve Isolation for Passive RFID Applications (수동형 RFID 시스템 적용을 위한 Isolation 개선 방법)

  • Kim, Jae-Kwon;Burm, Jin-Wook
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.44 no.4 s.316
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    • pp.45-49
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    • 2007
  • The isolation between transmitter and receiver has been a critical problem in a pulse-modulated RFID (Radio Frequency Identification) system where transmitter and receiver use the identical frequency. A method using a switch, a mixer, a BPF (band-pass filter), and an additional oscillator in the transmitter is proposed to improve the isolation between transmitter and receiver in an RFID system. The Proposed system up-converts the outgoing wave from a frequency different from the received signal and improves the isolation. The proposed method provided additional 20 dB improvement on the isolation.

A Study on the Implementation of Digital Filters with Reduced Memory Space and Dual Impulse Response Types (기억용량 절약과 순회방식 선택이 가능한 디지털 필터의 구성에 관한 연구)

  • Park, In Jung;Rhee, Tae Won
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.950-956
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    • 1986
  • In this paper, a direct addressing mode of a microprocessor is introduced to save memory capacity, and also a dedicated digital filter is constructed to speed up the filter processing and to enable an easy selection of the impulse response types. A theoretical analysis has been conducted on the errors caused by the finite word klength, rounding-off and multiplication procedures. The digital filter designed by the proposed method is made into a module which can function as a 7th-order recursive or a 14-order nonrecursive type with a simples witch operation. The proposed filter is implemented on a printed-circuit board. The frequency characteristics of this filter can be controlled by the multiplication values stored in ROMs. A low-pass, a high-pass and a band-pass filter have been designed and their frequency characteristics are verified by actual measurements. For a order higher filer, two filter modules have been cascaded into an integrated filter of 23rd-order non-recursive low-pass type and a 12th-order recursive multiband type. Their frequency characteirstics have been found to agree with the theory.

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InAs 및 GaAs 웨이퍼를 이용한 Type-II InSb 나노 구조 형성

  • Lee, Eun-Hye;Song, Jin-Dong;Kim, Su-Yeon;Bae, Min-Hwan;Han, Il-Gi;Jang, Su-Gyeong;Lee, Jeong-Il
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.305-305
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    • 2011
  • Type-II 반도체 나노 구조는 그것의 band alignment 특성으로 인해 광학 소자에 다양한 응용성을 가진다. 특히, 대표적인 Type-II 반도체 나노 구조인 InSb/InAs 양자점의 경우, 약 3~5 ${\mu}m$의 mid-infrared 영역의 spectral range를 가지므로, 장파장을 요하는 소자에 유용하게 적용될 수 있다. 또한, Type-II 반도체 나노 구조의 밴드 구조를 staggered gap 혹은 broken gap 구조로 조절함으로써 infrared 영역 광소자의 전자 구조를 유용하게 바꾸어 적용할 수 있다. 최근, GaSb wafer 위에 InSb/InAsSb 양자점을 이용하여 cutoff wavelength를 6 ${\mu}m$까지 연장한 IR photodetector의 연구도 보고되고 있다. 하지만, GaSb wafer의 경우 그것의 비용 문제로 인해 산업적 적용이 쉽지 않다는 문제가 있다. 이러한 문제를 해결하기 위해 GaAs wafer와 같은 비용 효율이 높은 wafer를 사용한 연구가 필요할 것이다. 본 연구에서는 Molecular Beam Epitaxy(MBE)를 이용하여 undoped InAs wafer 와 semi-insulating GaAs wafer 상에 InSb 양자 구조를 형성한 결과를 보고한다. InSb 양자 구조는 20층 이상의 다층으로 형성되었고, 두 가지 경우 모두 400${\AA}$ spacer를 사용하였다. 단, InAs wafer 위에 형성한 InSb 양자 구조의 경우 InAs spacer를, GaAs wafer 위에 형성한 양자 구조의 경우 InAsSb spacer를 사용하였다. GaAs wafer 위에 양자 구조를 형성한 경우, InSb 물질과의 큰 lattice mismatch 차이 완화 뿐 아니라, type-II 밴드 구조 형성을 위해 1 ${\mu}m$ AlSb 층과 1 ${\mu}m$ InAsSb 층을 GaAs wafer 위에 미리 형성해 주었다. 양자 구조 형성 방법도 두 종류 wafer 상에서 다르게 적용되었다. InAs wafer 상에는 주로 일반적인 S-K 형성 방식이 적용된 것에 반해, GaAs wafer 상에는 migration enhanced 방식에 의해 양자 구조가 형성되었다. 이처럼 각 웨이퍼에 대해 다른 성장 방식이 적용된 이유는 InAsSb matrix와 InSb 물질 간의 lattice mismatch 차이가 6%를 넘지 못하여 InAs matrix에 비해 원하는 양자 구조 형성이 쉽지 않기 때문이다. 두 가지 경우에 대해 AFM과 TEM 측정으로 그 구조적 특성이 관찰되었다. 또한 infrared 영역의 소자 적용 가능성을 보기 위해 광학적 특성 측정이 요구된다.

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Design of Ultra Wide-Band CMOS Low Noise Amplifier (광대역 CMOS 저잡음 증폭기 설계)

  • Moon Jeong-Ho;Jeong Moo-Il;Kim Yu-Sin;Lee Kwang-Du;Park Sang-Gyu;Han Sang-Min;Kim Young-Hwan;Lee Chang-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.6 s.109
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    • pp.597-604
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    • 2006
  • An ultrawideband(UWB) $3.1{\sim}5.15$ GHz low-noise amplifier employing a novel input matching circuit and feedback topology are presented. The proposed UWB amplifier is Implemented in $0.18{\mu}m$ RF CMOS technology. Measurements show a NF of $3.4{\sim}3.9$ dB, a power gain of $12.8{\sim}14$ dB, better than -9.4 of input matching and, an input IP3 of -1 dBm, while comsuming only 14.5 mW of power.

Microwave Absorbing Characteristics of Ferrite-silicon carbide surface Films Produced (플라즈마 용사방식에 의해 형성된 페라이트-탄화규소 표면층의 마이크로파 흡수 특성(II))

  • Shin, Dong-Chan;Son, Hyon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.8
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    • pp.1169-1175
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    • 1993
  • Plasma spraying method was used to fabricated the microwave absorbing ferrite-silicon carbide on the aluminum-alloy of the fuselage of an aircraft to protect it from RADAR detection. In this paper 15[rm] instead of 34[rm], the mean size of SIC-powder for ferrite-silicon carbide surface films(I) was used. 50(Kg/h) Instead of 70(Kg/h), the powder feed and 100[mm] Instead of 80(mm), spray distance of spray parameters was used. This M/W absorbers were designed experimentally and fabricated trially, as a result of which the relative frequency bandwidth of 2.8% were obtained under the tolerance limits of the reflection coefficients lower than-10[dB], and the maximum absorption thickness becomes 0.5[mm], which is much thinner than that of the conventional ones.

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Optical transmission technology of Ultra high-speed and Ultra long distance (초고속 초장거리 광전송 기술)

  • 이봉영
    • Information and Communications Magazine
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    • v.11 no.2
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    • pp.77-89
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    • 1994
  • High speed optical fiber transmission technology has been remarkably improved during the past 20 years. This paper presents recent research status and future technological issues for the future information society, that is, the Tb/s transmission by frequency division multiplexing and the ultra long-distance by optical soliton transmission. Erbium-doped fiber amplifier and recent optical technology have brought optical transmission system of up to 10 Gb/s to the point of commercialization. Taking into account the future super information highway, that is, B-ISDN network, ultra wide-band picture-based information can be provided for many subscribers via existing optical fiber cables. However, to achieve the high speed transmission, the technologies must be developed not only for transmission lines but also for transmission nodes. Since the conventional signal transmission/processing technique using electronics has the limit in its speed, novel photonic technology is being developed for this purpose. On the other hand, optical solitons propagate stably through optical fibers, without pulse broadening effect of the fiber dispersion. Since the pulse broadening effect becomes serious as the transmission speed increases, optical solitons is the important technologies to realize the high speed, long distance transmission.

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Analysis that do carrying along internet Wibro (휴대인터넷(와이브로-Wibro)에 대한 분석)

  • Lee Cheong-Jin;Kwon Oh-Heung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.981-985
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    • 2006
  • Wibro is stand for Wireless Broadband Internet called as Portable Internet, Wireless Broadband Internet or Wireless High-Speed Internet. This provides hish-speed internet service anytime, anywhere, from anyone and device with seamless mobility and the band is located between Mobile phone and wireless LAN. Wibro service should support handover to maintain connection continuously in movement because the service is based on If system which is different from cellular system. Current Mitre Mobility system and general Mobile If system has got a problem of delayed speed and lost packets during handover. IETF protocol has been proposed for minimizing this problem and its standardization is under process, mainly focused on Mip4, Mip6 and Mipshop WG. This article studies and analyzes an effective method of minimizing handover delay to improve the problem of WiBro system and its revitalization & outlook.

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