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Design of Ultra Wide-Band CMOS Low Noise Amplifier  

Moon Jeong-Ho (Department of Radio Science & Engineering, Hanbat University)
Jeong Moo-Il (Department of Radio Science & Engineering, Hanbat University)
Kim Yu-Sin (Samsung Electro-Mechanics)
Lee Kwang-Du (Samsung Electro-Mechanics)
Park Sang-Gyu (Samsung Electro-Mechanics)
Han Sang-Min (Samsung Advanced Instgitute of Technology)
Kim Young-Hwan (Samsung Advanced Instgitute of Technology)
Lee Chang-Seok (Department of Radio Science & Engineering, Hanbat University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.17, no.6, 2006 , pp. 597-604 More about this Journal
Abstract
An ultrawideband(UWB) $3.1{\sim}5.15$ GHz low-noise amplifier employing a novel input matching circuit and feedback topology are presented. The proposed UWB amplifier is Implemented in $0.18{\mu}m$ RF CMOS technology. Measurements show a NF of $3.4{\sim}3.9$ dB, a power gain of $12.8{\sim}14$ dB, better than -9.4 of input matching and, an input IP3 of -1 dBm, while comsuming only 14.5 mW of power.
Keywords
LNA; CMOS; UWB; Broadband;
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