• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.506-509
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• 2003

In this paper, the $\Phi$-q-n pattern and average discharge power of silicone rubber have investigated effect of inter impurities. It's changed impurities by silicone oil, water and copper. Applied voltage is AC 3, 4, 4.5, 5, 5.5[kV]. And data acquisition time is 10 second(600 cycles). These results suggest that partial discharge(PD) is shower negative polar than positive polar at 3[kV]. Positive polar's PD value increased with increase of applied voltage. The Conductivities expressed same $\Phi$-q-n pattern in positive polar and negative polar at phase region.

• Journal of Korean Society of Water and Wastewater
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• v.27 no.1
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• pp.49-58
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• 2013

A selected halogenated organic contaminant, monochlorophenol was successfully degraded by photocatalytic reaction in a circulating batch system. The photocatalytic degradation in most cases follows first-order kinetics. The photocatalytic reaction rate increased in the $TiO_2$ dosage range of 0.1 g/L to 0.4 g/L, then decreased with further increase of the dosage. Also the degradation rate increased over the range of the retention time from 0.49 min. to 0.94 min., then decreased with further increase of the retention time in the circulating batch reactor. The photocatalytic activity was enhanced by addition of metal impurities, platinum(Pt) and palladium(Pd) onto the photocatalysts. The photocatalytic degradation rate increased with the increase of Pt and Pd in the content range of 0 to 2wt %, then decreased with further increase of the metal contents. Therefore the metal loading to $TiO_2$ influence the degradation rate of a halogenated organic compound by acting as electron traps, consequently reducing the electron/positive hole pair recombination rate.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.80-84
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• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• Journal of Korea Foundry Society
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• v.15 no.3
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• pp.235-241
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• 1995

In order to improve the production process of low cost and high purity Vanadium, this study was done to reduce $V_2O_5$ into V-Al master alloy by Aluminothermic Reduction, followed by refining of V-Al master alloy electron beam melting. As melting time was increased in electron beam melting of V, the contents of interstitial impurities and Al, Fe were decreased but the contents of Si, Mo and W were increased due to lower vapor pressure of these elements than that of matrix V. Consequently, it was profitable that melting of V was done for 180 seconds. In addition, with number of melting, the purity of V did not significantly vary, because volatile impurities in V were removed mostly during the first step of melting. As a result of V refining by electron beam melting, high purity Vanadium of 3N(99.91wt%) was acquired including interstitial impurities total contents of which were maximum 400ppm.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.215-222
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• 2006

The passivity behavior of copper anode containing impurities in copper sulfate solution for electrorefining process was studied at several different levels of impurities such as As, Sb, Bi and Pb. The passivity behavior was investigated by electrochemical techniques (galvanostatic, potentiodynamic and cyclic voltammetry tests) and surface analysis (optical microscopy, electron probe microanalysis, scanning electron microscopy). The results were that arsenic, antimony inhibited passivation and bismuth accelerated it and lead containing anode showed different passivity behavior from above anodes. The improved passivity characteristics could be explained by decrease in oxygen content in passivity film which resulted from a reaction among the impurities, oxygen and copper in the anode. The SEM image revealed that arsenic or antimony containing anode exhibited a porous passivity film and bismuth containing anode showed the compact passivity film and lead containing anode had loose passivity film on anode.

• Journal of Powder Materials
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• v.9 no.4
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• pp.235-244
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• 2002

The effects of residual impurities on solid state sintering of the powder injection molded (PIMed) W-15wt%Cu nanocomposite powder were investigated. The W-Cu nanocomposite powder was produced by the mech-ano-chemical process consisting of high energy ball-milling and hydrogen reduction of W blue powder-cuO mixture. Solid state sintering of the powder compacts was conducted at $1050^{\circ}C$ for 2~10 h in hydrogen atmosphere. The den-sification of PIM specimen was slightly larger than that of PM(conventional PM specimen), being due to fast coalescence of aggregate in the PIM. The only difference between PIM and PM specimens was the amount of residual impurities. The carbon as a strong reduction agent effectively reduced residual W oxide in the PIM specimen. The $H_2O$ formed by $H_2$ reduction of oxide disintegrated W-Cu aggregates during removal process, on the contrary to this, micropore volume rapidly decreased due to coalescence of the disintegrated W-Cu aggregates during evolution of CO.It can be concluded that the higher densification was due to the earlier occurred Cu phase spreading that was induced by effective removal of residual oxides by carbon.

• Nuclear Engineering and Technology
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• v.40 no.3
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• pp.191-198
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• 2008

The influence of fission products' contents on the DUPIC fuel powder and pellet properties was experimentally evaluated using SIMFUEL as a surrogate for actual spent PWR fuel due to the high radioactivity of spent fuel. Pure $UO_2$ and SIMFUEL pellets with fission products equivalent to a burn-up of 35,000 MWd/tU and 60,000 MWd/tU were used as impurities in this study. The specific surface area of the powder milled after the OREOX treatment increased and resulted in sintered pellets with a theoretical density (TD) higher than 95%, regardless of the impurity contents. However, the grain size of the sintered pellets decreased with the increasing impurity contents. As a result of the dissolved oxides in $UO_2$ from the impurity groups, the specific surface area of the OREOX powder increased with an increase of the impurities. The grain size of the sintered pellets was significantly decreased by the metallic and oxide precipitates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.309-312
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• 2004

The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).