• Molecules and Cells
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• v.22 no.3
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• pp.262-268
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• 2006

During endometrial differentiation the extracellular matrix (ECM) changes dramatically to prepare for implantation of the embryo. However, the genes regulating the ECM build-up in the uterine endometrium during early pregnancy are not well known. Using the PCR-select cDNA subtraction method, dermatopontin was identified in the uterus of a pregnant mouse on day 4 of gestation. Dermatopontin mRNA increased dramatically on day 3, and was at its highest level at the time of implantation. Administration of RU 486 significantly inhibited mRNA expression by day 4 of gestation, but ICI 182,780 did not. Progesterone markedly induced dermatopontin expression in ovariectomized uteri within 4 h of administration, whereas estrogen had little effect. In silico analysis revealed progesterone receptor binding sites in the dermatopontin promoter region. Decidualization did not induce expression of dermatopontin; instead dermatopontin mRNA became strongly localized at the interimplantation site. In situ hybridization revealed that expression gradually decreased in the luminal epithelial cells as pregnancy progressed, whereas it increased in the stromal cells. The pattern of localization and the changes of intensity of dermatopontin mRNA coincided with those of collagen. Collectively, these results strongly suggest that dermatopontin expression is steroid-dependent. They also suggest that, at the time of implantation, dermatopontin expression is primarily regulated spatio-temporally by progesterone via progesterone receptors, and is modulated by the decidual response during implantation. Dermatopontin may be one of the regulators used to remodel the uterine ECM for pregnancy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.358-364
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• 1998

Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well($900^{\circ}C$),after annealing are similar trends to those of conventional ones($1150^{\circ}C$), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to $3.0\{mu}m$ as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between $3\times10^{13} and 1\times10^{14}/cm^2$. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.206-208
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• 2008

Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. In recent years, PCB drills tend to be more minimized increasingly as the electronics components have been more highly accumulated and minimized. Therefore nitrogen ion implantation was performed onto PCB drill (0.15 & 0.3 mm in diameter), in order to investigate mechanical properties of WC-Co cermets surface through Nano-indentation tests. PCB drill was implanted at energy of 70 keV, 90 keV, 120 keV and with the dose range of $1{\times}10^{17}$ and $5{\times}10^{17}\;ions/cm^{2}$. After ion implantation, WC-Co PCB drill bits was tested in actual operating situation to apply cutting tools industry and is concluded that the life time of nitrogen ion implanted PCB drills is one and a half times longer than the unimplanted.

• Journal of Chest Surgery
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• v.44 no.1
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• pp.61-63
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• 2011

Implantable cardioverter defibrillator (ICD) can be a crucial therapeutic modality for pediatric patients with congenital heart disease, Brugada syndrome, long QT syndrome and cardiomyopathy. Because transvenous implantation of ICD is mostly unfeasible for pediatric patients due to anatomical and technical limitations, epicardial patch type or subcutaneous type ICD have been used. Implantation of these alternative ICDs, however, was reported to be frequently associated with significant complications. We report a case of successful intrapericardial implantation of a single coil-type ICD through the transverse sinus in a 27 month-old child weighing lesser than 10 kg, and it was inferred from this experience that this alternative technique may decrease complications and morbidities after ICD implantation in children.

• Advances in materials Research
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• v.9 no.1
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• pp.1-14
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• 2020

The hybrid method of three-dimensional ion implantation and electric arc is presented as a novel plasma-ion technique that allows by means of high voltage pulsed and electric arc discharges, the bombardment of non-metallic and metallic ions then implanting upon the surface of a solid surface, especially out of metallic nature. In this study AISI/SAE 4140 samples, a tool type steel broadly used in the industry due to its acceptable physicochemical properties, were metallographically prepared then surface modified by implanting titanium and simultaneously titanium and nitrogen particles during 5 min and 10 min. The effect of the ion implantation technique over the substrate surface was analysed by characterization and electrochemical techniques. From the results, the formation of Ti micro-droplets upon the surface after the implantation treatment were observed by micrographs obtained by scanning electron microscopy. The presence of doping particles on the implanted substrates were detected by elemental analysis. The linear polarization resistance, potentiodynamic polarization and total porosity analysis demonstrated that the samples whose implantation treatment with Ti ions for 10 min, offer a better protection against the corrosion compared with non-implanted substrates and implanted at the different conditions in this study.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.722-727
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• 2009

The bipolar plates are not only the major part of the polymer electrolyte membrane fuel cell (PEMFC) stack in weight and volume, but also a significant contributor to the stack costs. Stainless steels are considered to be good candidates for bipolar plate materials of the PEMFC due to their low cost, high strength and easy machining, as well as corrosion resistance. In this paper, 316L stainless steel with and without nitrogen ion implantation were tested in simulated PEMFC environments for application as bipolar plates. The results showed that the nitride formed by nitrogen ion implantation contributed the decrease of the interfacial contact resistance without degradation of corrosion property. The combination of excellent properties indicated that nitrogen ion implanted stainless steel could be potential candidate materials as bipolar plates in PEMFC. Current efforts have focused on optimizing the condition of ion implantation.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.351-355
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• 1999

BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

• Korean Journal of Veterinary Research
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• v.15 no.1
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• pp.1-3
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• 1975

The effects of halothane and pentobarbital sodium anaesthesia in implantation and maintenance of pregnancy were compared in the rabbit ovariectomized the day after insemination and given steroid replacement therapy. The result has shown that halothane anaesthesia did not favour the overall process of implantation or foetal development, compared with pentobarbital sodium.

• Journal of Information Display
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• v.8 no.1
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• pp.1-5
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• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.