Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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A Five Mask CMOS LTPS Process With LDD and Only One Ion Implantation Step

  • Published : 2007.03.24
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Abstract

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

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References

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