• Title/Summary/Keyword: ITO-coated glass

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A control dispersion of $TiO_2$ nano powder for electronic paper of electrophoresis (전기영동형 전자종이를 위한 $TiO_2$ 나노분말의 분산 제어)

  • Kim, Jung-Hee;Oh, Hyo-Jin;Lee, Nam-Hee;Hwang, Jong-Sun;Kim, Sun-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.324-327
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    • 2005
  • An electrophoretic display using $TiO_2$ particles is the most promising candidate because it offers various advantages such as ink-on-paper appearance, good contrast ratio, wide viewing angle, image stability in the off-state and extremely low power consumption. The core technology of electrophoretic display is the dispersion controlling of $TiO_2$ nano particles in nonaqueous solution. To prepare an ink for electronic paper using electrophoretic properties of $TiO_2$ nano particles, cyclohexane with low dielectric constant and transparency, polyethylene for producing polymer coating layer which reduces apparent gravity of $TiO_2$, and $TiO_2$ powders were mixed together by planetary-mill. The zeta-potential value of $TiO_2$ particles in cyclohexane was measured about -40mV, but was measured over -110mV by dispersant attached to polyethylene-coated $TiO_2$ surface. Prepared electronic ink was filled in cross patterned micro-wall with $200{\mu}m$ in width and $40{\mu}m$ in height on ITO glass designed by photolithography. The response time of electronic paper evaluated by mobility of $TiO_2$ particle between micro-walls was measured 0.067sec, but the drift velocity from reflectance wave form during reverse from of electronic ink was measured 0.07cm/sec.

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Plasma Polymerized Styrene for Gate Insulator Application to Pentacene-capacitor (유기박막트랜지스터 응용을 위해 플라즈마 중합된 Styrene 게이트 절연박막)

  • Hwang, M.H.;Son, Y.D.;Woo, I.S.;Basana, B.;Lim, J.S.;Shin, P.K.
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.327-332
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    • 2011
  • Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

Spectroscopic Characterization of 400℃ Annealed ZnxCd1-xS Thin Films (400℃ 열처리한 삼원화합물 ZnxCd1-xS 박막의 분광학적 특성 연구)

  • Kang, Kwang-Yong;Lee, Seung-Hwan;Lee, Nam-Kwon;Lee, Jeong-Ju;Yu, Yun-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.1
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    • pp.101-112
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    • 2015
  • II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

Synthesis of Mesoporous Pt-Au Alloy Electrode by Electrodeposition Method for Direct Methanol Fuel Cell (전기화학적 증착법에 의한 직접 메탄올 연료전지(DMFC)용 메조포러스 백금-금 합금전극제조)

  • Park, Eun-Kyung;Ahn, Jae-Hoon;Kim, Young-Soo;Kim, Kyung-Hwa;Baeck, Sung-Hyeon
    • Korean Chemical Engineering Research
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    • v.46 no.4
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    • pp.727-731
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    • 2008
  • Mesoporous Pt-Au alloy films were successfully fabricated on ITO-coated glass by electrodeposition method using tri-blockcopolymer (P123) as a templating agent. The electrolyte consisted of 10 mM hydrogen hexachloroplatinate ($H_2PtCl_6$), 10 mM hydrogen tetrachloroaurate ($HAuCl_4$), and proper amount of P123. For comparison, control samples were electrodeposited without $HAuCl_4$ and P123. Film composition was determined by EDS(Energy Dispersive X-ray Spectroscopy), and the mesoporous structure was confirmed by TEM(Transmission Electron Microscopy). SEM(Scanning Electron Microscopy) was utilized to examine surface morphology, and it was observed that the addition of P123 affected the particle growth, resulting in the significant change of surface morphology. Methanol oxidation and CO oxidation were carried out to investigate electrocatalytic activities of synthesized samples. It was observed that the catalytic activity was strongly dependent on the film compositions. Compared with nonporous electrode prepared without P123 templating, mesoporous films prepared with P123 templating showed much higher catalytic activities and stability for both methanol oxidation and CO oxidation. These enhanced electrocatalytic activities were due to the high surface area and facilitated charge transfer of mesoporous films.

Degradation Mechanisms of Organic Light-emitting Devices with a Glass Cap (유리 덮개로 보호된 OLED소자의 발광특성 저하 연구)

  • Yang Yong Suk;Chu Hye Yong;Lee Jeong-Ik;Park Sang-He;Hwang Chi Sun;Chung Sung Mook;Do Lee-Mi;Kim Gi Heon
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.64-72
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    • 2006
  • We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum $(Alq_3)$. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents $(0.5mA\;{\leq}\;I_{Bias}\;{\leq}9mA)$, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.

Comparison of Electrical Signal Properties about Top Electrode Size on Photoconductor Film (광도전체 필름 상부 전극크기에 따른 전기적 신호 특성 비교)

  • Kang, Sang-Sik;Jung, Bong-Jae;Noh, Si-Cheul;Cho, Chang-Hoon;Yoon, Ju-Sun;Jeon, Sung-Pyo;Park, Ji-Koon
    • Journal of the Korean Society of Radiology
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    • v.5 no.2
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    • pp.93-96
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    • 2011
  • Currently, the development of direct conversion radiation detector using photoconductor materials is progressing in widely. Among of theses photoconductor materials, mercuric iodide compound than amorphous selenium has excellent absorption and sensitivity of high energy radiation. Also, the detection efficiency of signal generated in photoconductor film varies by electric filed and geometric distribution according to top-bottom electrode size. Therefore, in this work, the x-ray detection characteristics are investigated about the size of top electrode in $HgI_2$ photoconductor film. For sample fabrication, to solve the problem that is difficult to make a large area film, we used the spatial paste screen-print method. And the sample thickness is $150{\mu}m$ and an film area size is $3cm{\times}3cm$ on ITO-coated glass substrate. ITO(Indium-Tin-Oxide) electrode was used as top electrode using a magnetron sputtering system and each area is $3cm{\times}3cm$, $2cm{\times}2cm$ and $1cm{\times}1cm$. From experimental measurement, the dark current, sensitivity and SNR of the $HgI_2$ film are obtained from I-V test. From the experimental results, it shows that the sensitivity increases in accordance with the area of the electrode but the SNR is decreased because of the high dark current. Therefore, the optimized size of electrode is importance for the development of photoconductor based x-ray imaging detector.

Electrochemical Characteristic on Hydrogen Intercalation into the Interface between Electrolyte of the 0.1N H2SO4and Amorphous Tungsten Oxides Thin Film Fabricated by Sol-Gel Method (졸-겔법으로 제조된 비정질의 텅스텐 산화물 박막과 황산 전해질 계면에서 일어나는 수소의 층간 반응에 대한 전기화학적 특성)

  • Kang, Tae-Hyuk;Min, Byoung-Chul;Ju, Jeh-Beck;Sohn, Tae-Won;Cho, Won-Il
    • Applied Chemistry for Engineering
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    • v.7 no.6
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    • pp.1078-1086
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    • 1996
  • The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

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Synthesis of Pt-$MoO_3$ Electrode by Electrodeposition Method for Direct Methanol Fuel Cell (전기화학적 증착법에 의한 직접 메탄올 연료전지(DMFC)용 백금-삼산화몰리브테늄 전극제조)

  • Shin, Ju-Kyung;Jung, So-Mi;Baeck, Sung-Hyeon;Tak, Yong-Suk
    • Applied Chemistry for Engineering
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    • v.21 no.4
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    • pp.435-439
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    • 2010
  • Pt-$MoO_3$ electrodes were fabricated on ITO-coated glass by electrodeposition method using 20 mM hydrogen hexachloroplatinate ($H_2PtCl_6$) and 10 mM Mo-peroxo electrolyte. Deposition order was varied, and catalytic activities of synthesized electrodes were compared with that of pure Pt electrode. Scanning Electron Microscopy (SEM) was utilized to examine surface morphology. The crystallinity of synthesized films was analyzed by X-ray Diffraction (XRD), and the oxidation state of both the platinum and molybdenum were determined by X-ray Photoelectron Spectroscopy (XPS) analyses. The catalytic activity and stability for methanol oxidation were measured using cyclic voltammetry (CV) and chronoamperometry (CA) in a mixture of 0.5 M $H_2SO_4$ and 0.5 M $CH_3OH$ aqueous solution. $MoO_3$ electrodeposited on the surface of Pt showed much higher catalytic acitivity and stability than pure Pt electrode due to the good contact between Pt and $MoO_3$.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Physical Properties of Cd2GeSe4 and Cd2GeSe4:Co2+ Thin Films Grown by Thermal Evaporation (진공증착법에 의해 제작된 Cd2GeSe4와 Cd2GeSe4:Co2+ 박막의 물리적 특성)

  • Lee, Jeoung-Ju;Sung, Byeong-Hoon;Lee, Jong-Duk;Park, Chang-Young;Kim, Kun-Ho
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.459-467
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    • 2009
  • $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.