• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.336.1-336.1
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• 2014

대표적인 TCO 물질인 ITO는 디스플레이 패널이나 태양 전지 등과 같은 소자에 널리 사용되고 있다. 최근에는 대량생산 및 대면적화, 그리고 유연 디스플레이 응용을 위해 롤투롤 스퍼터링(roll to roll sputtering) 공정을 이용하여 플라스틱 기판에 ITO박막을 증착하여 ITO 필름을 제작하고 있다. 롤투롤 방식으로 ITO 필름의 제작 시 공정 변수에 따라 ITO 박막의 전기적 광학적 물성 변화가 매우 크기 때문에, 공정 변수에 따른 ITO 박막의 전기적, 광학적 특성 변화에 대한 연구의 필요성이 매우 높아지고 있다. 따라서 본 연구에서는 롤투롤 스퍼터링 방법으로 PET 기판 위에 다양한 조건으로 ITO 박막을 증착하여 공정변수에 따른 ITO 박막의 물성을 조사 하였다. 이를 위해 ITO (In/Sn=95/5 wt.%) 타겟을 사용하여 DC 파워와 산소 분압비, 열처리 온도 등을 변화시켜 낮은 면저항과 높은 광투과도를 가지는 최적의 ITO 증착 조건을 찾은 후 ITO 박막을 PET 기판 위에 두께 별로 증착 하였다. ITO 박막의 두께와 열처리 온도에 따른 전기적 특성은 면저항 측정기와 홀 측정 장치를 이용하여 분석하였고, 분광광도계와 탁도 측정기를 이용하여 광학적 특성을 관찰하였다. 또한, GIXD를 이용하여 이들 박막의 구조와 결정성에 대한 조사를 수행하였다. 이 결과들로부터 산소 분압비에 따른 ITO/PET 박막의 저항 특성 변화와 ITO 박막의 두께와 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 조사하여, 롤투롤 스퍼터링법에서 공정 조건에 따른 ITO/PET 필름의 물성변화를 보고하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.244.1-244.1
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• 2014

디스플레이 패널의 터치 스크린에 가장 널리 사용되는 ITO 전극은 사용자의 눈에 전극 면이 시각적으로 구분되지 않도록 해야 한다. 따라서 최근에는 ITO 전극 면이 구분되지 않도록 하기 위해 다층 박막으로 이루어진 인덱스 매칭(index matching, IM) 기술을 이용하여 ITO 전극 필름을 제작하고 있다. 이러한 인덱스 매칭된 ITO 필름은 기판이나 공정 조건, 인덱스 매칭 층의 물질 종류에 따라 ITO 박막의 전기적 광학적 특성이 각각 다르게 나타나기 때문에 이에 대한 많은 연구가 이루어지고 있다. 본 연구에서는 롤투롤 스퍼터링(roll to roll sputtering) 방법으로 고굴절과 저굴절이 순차적으로 코팅 처리된 PET 기판 위에 ITO 박막을 증착하여 IM-ITO 필름을 제작하고 전기적 광학적 특성을 관찰하였다. 이를 위해 습식(wet) 코팅 방법으로 저굴절층과 고굴절층을 PET 필름 위에 코팅하여 IM층을 제작한 PET 필름 위에 ITO 박막을 증착하고, $150^{\circ}C$로 후 열처리를 하여 인덱스 매칭된 ITO 필름을 제작하였다. 제작된 필름은 GIXD를 이용하여 박막의 구조와 결정성을 조사하였고, 면저항 측정기와 홀측정 장치를 이용하여 전기적 특성을 관찰하였다. 그리고 분광광도계와 탁도(haze) 측정기를 이용하여 광학적 특성을 조사하였다. 본 연구를 통해 롤투롤 스퍼터링 방법으로 유무기 복합막으로 구성된 IM-ITO 박막의 전기적 광학적 구조적 특성에 대해 보고하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1277-1282
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• 2004

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with 8${\times}$10$^{-3}$ $\Omega$-cm of resistivity and 80 % of transmittance at optimal conditions.

• Journal of Surface Science and Engineering
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• v.32 no.6
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• pp.671-676
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• 1999

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows : operating pressure of 5 mTorr, target-substrate distance of 45mm, do power of 20~30W, and oxygen gas ratio of 10%. The optical transmittance is above 80% at 550 nm, and the sheet resistance and resistivity of films are 24 Ω/square and $1.5\times$10$^{-3}$ Ωcm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.205-211
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• 2012

We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.

• Applied Chemistry for Engineering
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• v.19 no.1
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• pp.37-44
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• 2008

The multi-layer PET film of ITO/ATO was prepared by a wet coating method to obtain the transparent film with a high conductance at low cost. ITO nano-particles were synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2nm$ and $4{\times}10^4{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. Roughness (Ra), resistivity, and transmissivity of ATO film on PET are 9 nm, $5.5{\times}10^6{\Omega}{\cdot}cm$, and 91%. The multi-layered film of ITO/ATO was obtained by solution including 0.1, 0.5, 1.0, and 2.0 ITO wt% on ATO layer. Roughness (Ra) of multi-layered film with 0.1, 0.5, 1.0, and 2.0 ITO wt% is 4, 10, 12, and 16 nm, respectively. Corresponding resistivity with an increasing ITO concentration is $3.7{\times}10^6$, $2.4{\times}10^6$, $8{\times}10^5$, and $2{\times}10^5{\Omega}{\cdot}cm$. Transmissivity of ITO/ATO film decreases as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1.0, and 2.0 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.397-400
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• 2013

Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to $120^{\circ}C$. The ITO thin films were crystallized at $50^{\circ}C$ for Si (001) substrates and at $75^{\circ}C$ for PET substrate. The ITO thin films grown onto PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about $7{\times}10^{-4}{\Omega}{\cdot}cm$ and a transmittance of about 84% at a wavelength of 550 nm. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.58-61
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• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.67-73
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• 2009

The stress-strain behavior and its effects on the crack initiation and growth of ITO film on PET substrate with a sheet resistance of 45 ohms/sq were investigated. Electrical resistance increased gradually at the strain of 0.7% in the elastic to plastic transition region of the stress strain curves. Numerous cracks were observed after 1% strain and the increase of the resistance can be linked to the cracking of ITO thin films. The onset strain for the increase of resistance increased with increasing strain rate, suggesting the crack initiation is dependent on the strain rate. Upon loading, the initial cracks perpendicular to the tensile axis were observed and propagated the whole sample width with increasing strain. The spacing between horizontal cracks is thought to be determined by the fracture strength and the interfacial strength between ITO and PET. The crack density increased with increasing strain. The spacing between horizontal cracks (perpendicular to the stress axis) increased with decreasing strain rate, The increase of crack density with decreasing strain rate can be attributed to the higher fraction of the plastic strain to the total strain at a given total strain. As the strain increased over 5% strain, cracks parallel to the stress axis were developed and increased in number with strain, accompanied by drastic increases of resistance.