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Characterization of the Crystallized ITO Thin Films Grown at Different Temperatures by Off-axis RF Magnetron Sputtering

유연성 기판 위에 증착된 ITO 박막의 공정 온도에 따른 전기적·광학적 특성 평가

  • Choi, Hyung-Jin (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Received : 2012.12.03
  • Accepted : 2013.04.23
  • Published : 2013.05.01

Abstract

Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to $120^{\circ}C$. The ITO thin films were crystallized at $50^{\circ}C$ for Si (001) substrates and at $75^{\circ}C$ for PET substrate. The ITO thin films grown onto PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about $7{\times}10^{-4}{\Omega}{\cdot}cm$ and a transmittance of about 84% at a wavelength of 550 nm. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.

Keywords

References

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