• Title/Summary/Keyword: ISRC

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Wet-etching Properties of GaAs Using $NH_4OH-H_2O_2-H_2O$ Mixed Solution and Its Application to Fabrication Method for Released GaAs Microstructures with Rectangular Cross Section ($NH_4OH-H_2O_2-H_2O$ 혼합액을 이용한 GaAS의 습식식각 특성 연구 및 이를 이용한 부유된 사각형 단면을 가지는 GaAs 미세구조물의 제작 방법)

  • Kim, Jong-Pal;Park, Sang-Jun;Paik, Seung-Joon;Kim, Se-Tae;Koo, Chi-Wan;Lee, Seung-Ki;Cho, dong-Il
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.304-313
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    • 2001
  • In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

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Investigation of Feasibility of Tunneling Field Effect Transistor (TFET) as Highly Sensitive and Multi-sensing Biosensors

  • Lee, Ryoongbin;Kwon, Dae Woong;Kim, Sihyun;Kim, Dae Hwan;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.141-146
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    • 2017
  • In this letter, we propose the use of tunneling field effect transistors (TFET) as a biosensor that detects bio-molecules on the gate oxide. In TFET sensors, the charges of target molecules accumulated at the surface of the gate oxide bend the energy band of p-i-n structure and thus tunneling current varies with the band bending. Sensing parameters of TFET sensors such as threshold voltage ($V_t$) shift and on-current ($I_D$) change are extracted as a function of the charge variation. As a result, it is found that the performances of TFET sensors can surpass those of conventional FET (cFET) based sensors in terms of sensitivity. Furthermore, it is verified that the simultaneous sensing of two different target molecules in a TFET sensor can be performed by using the ambipolar behavior of TFET sensors. Consequently, it is revealed that two different molecules can be sensed simultaneously in a read-out circuit since the multi-sensing is carried out at equivalent current level by the ambipolar behavior.

High $f_T$ 30nm Triple-Gate $In_{0.7}GaAs$ HEMTs with Damage-Free $SiO_2/SiN_x$ Sidewall Process and BCB Planarization

  • Kim, Dae-Hyun;Yeon, Seong-Jin;Song, Saegn-Sub;Lee, Jae-Hak;Seo, Kwang-Seok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.117-123
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    • 2004
  • A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

Optimization of a radiator for a MPFL system in a GEO satellite

  • Afshari, Behzad Mohasel;Abedi, Mohsen;Shahryari, Mehran
    • Advances in aircraft and spacecraft science
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    • v.4 no.6
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    • pp.701-709
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    • 2017
  • One of the components that used in the satellite thermal control subsystem is the Mechanically Pumped Fluid Loop (MPFL) system; this system mostly used in geosynchronous orbit (GEO) satellites, and can transfer heat from a hot point to a cold point using the fluid which circulated in a closed loop. Heat radiates to the deep space at the cold plate to cool down the fluid temperature. In this research, the radiative heatexchanger (RHX) for a MPFL system is optimized. The genetic algorithm has been used for minimizing the total mass and pressure drop by considering a constant transferred heat rate at the heat exchanger. The optimization has been done in two cases. In case I, two parameters are considered as a goal function, so optimization is performed using NSGA-II method. Results of optimization are shown in the pareto diagram. In case II, the diameter of pipe is considered constant, so the optimized value for distances of the parallel pipes is obtained by using the genetic algorithm, in which the system has the least total mass. Results show that in the RHX, by increasing the pipe diameter, pressure drop decreases and total mass increases. Also by considering a constant value for pipe diameter, an optimum distance between pipes and pipe length are obtained in which the system has a minimum mass.

Effect of Rapid Thermal Annealing on Growth and Field Emission Characteristics of Carbon Nanotubes

  • Ko, Sung-Woo;Shin, Hyung-Cheol;Park, Byung-Gook;Lee, Jong-Duk;Jun, Pil-Goo;Kwak, Byung-Hwak;Noh, Hyung-Wook;Uh, Hyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.453-455
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    • 2004
  • The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

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Fast Very Deep Convolutional Neural Network with Deconvolution for Super-Resolution (Super-Resolution을 위한 Deconvolution 적용 고속 컨볼루션 뉴럴 네트워크)

  • Lee, Donghyeon;Lee, Ho Seong;Lee, Kyujoong;Lee, Hyuk-Jae
    • Journal of Korea Multimedia Society
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    • v.20 no.11
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    • pp.1750-1758
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    • 2017
  • In super-resolution, various methods with Convolutional Neural Network(CNN) have recently been proposed. CNN based methods provide much higher image quality than conventional methods. Especially, VDSR outperforms other CNN based methods in terms of image quality. However, it requires a high computational complexity which prevents real-time processing. In this paper, the method to apply a deconvolution layer to VDSR is proposed to reduce computational complexity. Compared to original VDSR, the proposed method achieves the 4.46 times speed-up and its degradation in image quality is less than -0.1 dB which is negligible.

The Recent Trend of ISO/TC46 and International Standard Numbers (ISO/TC46과 국제표준번호제도의 발전 동향)

  • Kim, Jeong-Hyun
    • Journal of Information Management
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    • v.35 no.3
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    • pp.51-74
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    • 2004
  • ISO/TC46 is the International Organization for Standardization of practices relating to libraries, documentation and information centers, indexing and abstracting services, archives, information science and publishing. This study analyzes current trend of ISO/TC46 and the 4 subcommittees, considering recent matters in regard with identification and description of information resources: ISBN, ISSN, ISMN, ISRN, ISRC, ISAN, ISTC, etc. This research discusses also the question of how international standard numbers system are managed: endowment identifying numbers for electronic resources, component parts, and works.

A Triple-Band Transceiver Module for 2.3/2.5/3.5 GHz Mobile WiMAX Applications

  • Jang, Yeon-Su;Kang, Sung-Chan;Kim, Young-Eil;Lee, Jong-Ryul;Yi, Jae-Hoon;Chun, Kuk-Jin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.295-301
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    • 2011
  • A triple-band transceiver module for 2.3/2.5/3.5 GHz mobile WiMAX, IEEE 802.16e, applications is introduced. The suggested transceiver module consists of RFIC, reconfigurable/multi-resonance MIMO antenna, embedded PCB, mobile WiMAX base band, memory and channel selection front-end module. The RFIC is fabricated in $0.13{\mu}m$ RF CMOS process and has 3.5 dB noise figure(NF) of receiver and 1 dBm maximum power of transmitter with 68-pin QFN package, $8{\times}8\;mm^2$ area. The area reduction of transceiver module is achieved by using embedded PCB which decreases area by 9% of the area of transceiver module with normal PCB. The developed triple-band mobile WiMAX transceiver module is tested by performing radio conformance test(RCT) and measuring carrier to interference plus noise ratio (CINR) and received signal strength indication (RSSI) in each 2.3/2.5/3.5 GHz frequency.

Side-Channel Attack Trends of Code-based PQC Algorithm for Hardware Acceleration of MEDS (코드 기반 양자 내성 암호 MEDS 알고리즘의 하드웨어 가속을 위한 부채널 공격 연구 동향 분석)

  • Yunji Lee;Yongseok Lee;Yunheung Paek
    • Proceedings of the Korea Information Processing Society Conference
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    • 2024.05a
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    • pp.367-370
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    • 2024
  • 양자컴퓨터 시대가 눈앞에 도래한 지금 차세대 암호로 주목받고 있는 양자 내성 암호는 다양한 수학적 알고리즘에 안전성을 기반하고 있으나 이 안전성을 위협하는 대표적인 공격 기법 중 하나인 부채널 분석 공격에 대응하기 위한 노력들이 계속되어 왔다. 이 논문에서는 코드 기반 양자 내성 암호를 중심으로 알고리즘에 위협적인 부채널 분석 공격에 대한 연구 동향을 분석하였다. 그리고 NIST 에서 PQC 표준화를 위해 Round 를 진행 중인 후보 중 하나인 코드 기반 알고리즘 MEDS 에 대해 소개하고, MEDS 알고리즘의 최적화를 위해 기존에 연구되었던 코드 기반 암호에 대한 부채널 분석 공격 대응 측면에서의 알고리즘의 안전성 확보라는 보안 비용과 하드웨어 가속 등을 통한 성능 향상이 적절한 조화를 이룰 수 있도록 설계하기 위한 방안에 대해 알아보았다.

A Study on Code Vulnerability Repair via Large Language Models (대규모 언어모델을 활용한 코드 취약점 리페어)

  • Woorim Han;Miseon Yu;Yunheung Paek
    • Proceedings of the Korea Information Processing Society Conference
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    • 2024.05a
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    • pp.757-759
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    • 2024
  • Software vulnerabilities represent security weaknesses in software systems that attackers exploit for malicious purposes, resulting in potential system compromise and data breaches. Despite the increasing prevalence of these vulnerabilities, manual repair efforts by security analysts remain time-consuming. The emergence of deep learning technologies has provided promising opportunities for automating software vulnerability repairs, but existing AIbased approaches still face challenges in effectively handling complex vulnerabilities. This paper explores the potential of large language models (LLMs) in addressing these limitations, examining their performance in code vulnerability repair tasks. It introduces the latest research on utilizing LLMs to enhance the efficiency and accuracy of fixing security bugs.