• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.632-642
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• 2017

This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1843-1850
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• 2016

This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.194-200
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• 2012

In this paper, we proposed a SPICE model of high-voltage insulated gate bipolar transistor(IGBT). The proposed model consists of two sub-devices, a MOSFET and a BJT. Basic I-V characteristics and their temperature dependency were realized by adjusting various parameters of the MOSFET and the BJT. To model nonlinear parasitic capacitances such as a reverse-transfer capacitance, multiple junction diodes, ideal voltage and current amplifiers, a voltage-controlled resistor, and passive devices were added in the model. The accuracy of the proposed model was verified by comparing the simulation results with the experimental results of a 1200V trench gate IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• Proceedings of the KIPE Conference
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• 1996.06a
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1126-1128
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• 1992

The object of this study is the design of 3 phase on-board inverter. The key point in the inverter design is the selection of switching device, and its performance effects that of total system. In this study, six-step square wave inverter was designed using IGBT ( Insulated Gate Bipolar Transistor ) which has the advantages of MOSFET and bipolar transistor as switching device. The condition of being small and light which is the one of requirements for on-board equipment was accomplished by using IGBT module and optimising the snubber circuit, and the reliablity was increased. It is confirmed that the designed inverter satisfies the required performance through the performance and environment test.