• Journal of the Korean Society of Radiology
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• v.4 no.2
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• pp.27-30
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• 2010

A X-ray optical modulator measures x-ray dose using optical transmissivity ratio change of the liquid crystal cell. To apply in this optical modulator, we made photoconductor films and compared electrical properties of this films in this study. Photoconductors are deposited on ITO glass with $200{\mu}m$ using the percipitation method and print method. I-V test was conducted to alalyze electrical properties of this films and measured darkcurrent and SNR was acquired using the measured dark current and sensitivity. As a result of this measurements, $HgI_2$ film made by precipitation method is lower(about 40%) darkcurrent than $HgI_2$ films made by precipitation method and sensitivity is two times greater than print method. And we knew that $HgI_2$ films were also 10~25 times greater SNR at $1v/{\mu}m$ than $PbI_2$, PbO, CdTe film made by precipitation method. This results suggest that $HgI_2$ films made by precipitation method has improved characteristics of x-ray dose meter by applying in x-ray optical modulator.

• The Journal of Korean Society for Radiation Therapy
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• v.14 no.1
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• pp.89-94
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• 2002

During radiation therapy with electron beam to eyelid, we must keep the minimal dose on eyeball as possible. especially in the treatment of Sebaceous gland carcinoma, Squamouse cell ca., and basal cell ca. of eyelid and low grade MALToma etc. But if radiation field covered the upper & lower eyelid, it makes a cataract on lens of treated eye, in late complications. Now we reports the advantages of Tungsten eyeball shielding block compare to previously used lead block. with BOLX-I material, we made a eyeball model and measured the absorbed dose of 6MeV & 9MeV electron hem at 6 point of eyeball model with TLD chip. And compare the absorbed dose to previously lead block and other types of Tungsten eyeball shielding block.

• Nuclear Engineering and Technology
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• v.56 no.8
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• pp.3378-3384
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• 2024

Investigations were conducted on the addition of barium's impact on the radiation shielding and physical attributes of five different glasses, designated S1-S5, with varying BaO contents. Using two point sources namely Co⁶⁰ and Cs¹³⁷ along with a scintillation detector [NaI(TL)], experimental measurements were made of the shielding parameters of γ-rays, namely the effective atomic number (Z_eff), electron density (N_el), half-value layer (HVL), linear attenuation coefficient (μ), mass attenuation coefficient (μ_m), mean free path (λ), and radiation protection effectiveness at the energies of 0.664, 1.177, and 1.334 MeV, and comparisons made with recently considered glasses as well as frequently employed materials for γ-ray shielding. The results show that the examined glasses' physical and radiation shielding qualities are improved by the addition of BaO. The μ values increased from 0.245 to 0.275 cm^-1 (0.662 MeV), from 0.174 to 0.198 cm^-1 (1.173 MeV), and from 0.161 to 0.189 (1.332 MeV). The observed values of HVL decreased from 2.83, 3.98, and 4.3 cm to 2.5, 3.5, and 3.62 cm at 0.662, 1.173, and 1.332 MeV, respectively, for the samples S1 and S5. In addition, the S5 glass sample was determined to have the best protection against photon among all the samples that were evaluated, as well as against recently considered glasses and those materials often utilized for gamma-ray shielding purposes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• Corrosion Science and Technology
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• v.16 no.3
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• pp.151-159
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• 2017

The MA8 alloy (formula Mg-Mn-Се) has been shown to have greater corrosion stability than the VMD10 magnesium alloy (formula Mg-Zn-Zr-Y) in chloride-containing solutions by Scanning Vibrating Electrode Technique (SVET) and by optical microscopy, gravimetry, and volumetry. It has been established that the crucial factor for the corrosion activity of these samples is the occurrence of microgalvanic coupling at the sample surface. The peculiarities of the kinetics and mechanism of the corrosion in the local heterogeneous regions of the magnesium alloy surface were investigated by localized electrochemical techniques. The stages of the corrosion process in artificial defects in the coating obtained by plasma electrolytic oxidation (PEO) at the surface of the MA8 magnesium alloy were also studied. The analysis of the experimental data enabled us to determine that the corrosion process in the defect zone develops predominantly at the magnesium/coating interface. Based on the measurements of the corrosion rate of the samples with PEO and composite polymer-containing coatings, the best anticorrosion properties were displayed by the composite polymer-containing coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1045-1048
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• 2003

In this paper, we studied plasma damage of MIS capacitor with $Al_2$O$_3$ dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same condition, leakage current and C-V measurements were carried out for Pt/A1$_2$O$_3$/Si structures. The flatband voltage shift was appeared in the C-V plot, and it was caused by the variation of the fixed interface charge and the interface trapped charge. From I-V measurement, it was found the leakage current along the periphery could not be ignored. Finally, we established the process condition of RF power 300W, 100mTorr, Ar/Cl$_2$ gas 60sccm as an optimal etching condition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.