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http://dx.doi.org/10.5573/JSTS.2009.9.1.051

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation  

Ismail, Raid A. (School of Applied Science / University of Technology / Iraq (Ministry of Science and Technology))
Publication Information
Abstract
Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.
Keywords
Cuprous oxide; thin film; rapid thermal oxidation; heterojunction;
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