• 제목/요약/키워드: I-V characteristics

검색결과 2,033건 처리시간 0.042초

양성자 주입 조건에 따른 PT-IGBT의 정특성 및 동특성 분석 (Static and Dynamic Characteristics of PT-IGBT by Proton Irradiation)

  • 최성환;이용현;배영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.14-15
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    • 2007
  • Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

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a-Si:H TFT의 누설전류 및 문턱전압 특성 연구 (Leakage Current and Threshold Voltage Characteristics of a-Si:H TFT Depending on Process Conditions)

  • 양기정;윤도영
    • Korean Chemical Engineering Research
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    • 제48권6호
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    • pp.737-740
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    • 2010
  • 높은 누설 전류와 문턱 전압의 이동은 비정질 실리콘(a-Si:H) 트랜지스터(TFT)의 단점이다. 이러한 특성은 게이트 절연체와 활성층 박막의 막 특성, 표면 거칠기와 공정 조건에 따라 영향을 받는다. 본 연구의 목적은 누설 전류와 문턱 전압의 특성을 개선하는데 목적이 있다. 게이트 절연체의 공정 조건에 대해서는 질소를 증가한 증착 공정 조건을 적용하였고, 활성층의 공정 조건에 대해서는 산소를 증가한 공정 조건을 적용하여 전자 포획을 감소시키고 박막의 밀도를 증가시켰다. $I_{off}$$65^{\circ}C$ 조건하에서 1.01 pA에서 0.18pA로, ${\Delta}V_{th}$는 -1.89 V에서 -1.22V로 개선되었다.

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

  • Hegde, Vinayakprasanna N.;Praveen, K.C.;Pradeep, T.M.;Pushpa, N.;Cressler, John D.;Tripathi, Ambuj;Asokan, K.;Prakash, A.P. Gnana
    • Nuclear Engineering and Technology
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    • 제51권5호
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    • pp.1428-1435
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    • 2019
  • The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

채널 형상에 따른 마이크로 판형열교환기의 열적 특성 연구 (The Study on Thermal Characteristics in Micro Plated Heat Exchangers with Channel Shapes)

  • 김윤호;서장원;문정은;이규정
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회B
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    • pp.1894-1899
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    • 2007
  • This paper presents the thermal characteristics for micro heat exchanger with different micro-channel shapes. The shapes of micro-channel has been manufactured sheet metal by chemical etching for the I shape of straight channel and V and W shapes of chevron feature and fabricated micro plated heat exchangers using the vacuum brazing of bonding technology. The experimental study has been performed on heat transfer and pressure drop characteristics with various Reynolds number for water to water at the counter flows. The average heat transfer rate of V and W shapes has been showed about 1.5${\sim}$1.6 times large than those of I shape. For the comparison of Nusselt number, it is known that the convective heat transfer of V and W shapes represent more effect than I shape. The pressure drops of V and W shapes are about 1.2${\sim}$1.7 times lager than those of I shape.

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ZnO:As/ZnO:Al homo-junction LED의 V-I 특성 분석 (Analysis on the V-I Curve of ZnO:As/ZnO:Al homo-junction LED)

  • 오상현;정윤환;유연연;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.410-411
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    • 2007
  • To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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교류 구동 방법에 의한 유기전계발광소자 발광 특성의 모델 (Model of Organic Light Emitting Device Emission Characteristics with Alternating Current Driving Method)

  • 서정현;주성후
    • 한국재료학회지
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    • 제31권10호
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    • pp.586-591
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    • 2021
  • This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9 % for luminance, and 1.9 % for luminous efficiency.

직류+60[Hz]교류 중첩전압에 대한 18[kV] ZnO 피뢰기의 전기적 특성 (Electrical Properties of 18[kV] ZnO Surge Arrester Stressed by the Mixed DC and 60[Hz] AC Voltages)

  • 이수봉;이승주;이복희
    • 조명전기설비학회논문지
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    • 제21권10호
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    • pp.66-72
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    • 2007
  • 이 논문은 직류+60[Hz] 교류 중첩전압에서 신품과 노후된 18[kV] 산화아연 서지피뢰기의 누설전류와 전력손실에 대하여 기술하였다. 최대 50[kV]의 직류+60[Hz] 교류를 발생시킬 수 있는 중첩전압발생장치가 설계되고 제작되었다. 피뢰기의 I-V 특성곡선은 전압중첩률 K의 함수로 측정된다. DC와 AC 전압이 중첩된 I-V, R-V 특성곡선은 순수한 직류와 교류곡선 사이에 있고 저전류 영역에서 교차현상이 나타난다. 그 결과 중첩 전압에서 직류 성분의 증가는 ZnO 피뢰기의 전체 누설전류의 저항성분의 증가를 유발한다. 또한 같은 인가전압에서 피뢰기를 통해 흐르는 누설전류는 상용전원에서 장시간 스트레스 받은 피뢰기가 신품 피뢰기에 비해서 높게 나타났다.

고분자 전해질형 연료전지의 최적운전을 위한 전압-전류, 전류-전력 특성 연구 (A Study on the I-V and I-P Characteristics for Optimized Operation of PEMFC)

  • 정유라;최용성;이경섭
    • 전기학회논문지P
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    • 제59권1호
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    • pp.112-116
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    • 2010
  • Fuel cell as a renewable energy source is clean and has a lot of advantages. The source can solve energy crisis and environmental problems such as greenhouse effect, air pollution and the ozone layer destruction. This paper introduces hybrid system(hydro-Genius Professional, heliocentris) of solar cell and fuel cell. Also, this paper shows the I-P, V-I characteristics of fuel cells which are connected in parallel and series. From these results, we also found the maximum power was transferred at 0.5[${\Omega}$]. The terminal voltage was also decreased according to the current because of the internal resistance. The power transfer in series was two times than that in parallel.

WAVE Communication-based V2I Channel Modeling

  • Lee, Soo-Hwan;Kim, Jong-Chan;Lim, Ki-Taek;Cho, Hyung-Rae;Seo, Dong-Hoan
    • Journal of Advanced Marine Engineering and Technology
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    • 제40권10호
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    • pp.899-905
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    • 2016
  • Wireless access in vehicle environment (WAVE) communication is currently being researched as core wireless communication technologies for cooperative intelligent transport systems (C-ITS). WAVE consists of both vehicle to vehicle (V2V) communication, which refers to communication between vehicles, and vehicle to infrastructure (V2I) communication, which refers to the communication between vehicles and road-side stations. V2I has a longer communication range than V2V, and its communication range and reception rate are heavily influenced by various factors such as structures on the road, the density of vehicles, and topography. Therefore, domestic environments in which there are many non-lines of sight (NLOS), such as mountains and urban areas, require optimized communication channel modeling based on research of V2I propagation characteristics. In the present study, the received signal strength indicator (RSSI) was measured on both an experience road and a test road, and the large-scale characteristics of the WAVE communication were analyzed using the data collected to assess the propagation environment of the WAVE-based V2I that is actually implemented on highways. Based on the results of this analysis, this paper proposes a WAVE communication channel model for domestic public roads by deriving the parameters of a dual-slope logarithmic distance implementing a two-ray ground-reflection model.

일사량에 따른 전압-전류 특성 (I-V Characteristics According to the Irradiation)

  • 황준원;정종철;김석곤;최용성;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.2103_2104
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    • 2009
  • Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with the irradiation, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the irradiation. The results show that the DC current of the photovoltaic system are increased along with the increasing values of irradiation.

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